CSD863 Datasheet

CSD863 EPITAXIAL PLANAR SILICON TRANSISTORS

SYMBOL Collector Base Voltage VCBO Collector Emitter Voltage VCEO Emitter Base Voltage VEBO Collector Current IC Peak Collector Current ICP Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Tstg VALUE 60 50 5.0 1.0 2.0 0.9 150 - 55 to +150 ELECTRICAL CHARA.

Features

E=2V IC=500mA, IB=50mA NPN PNP Base Emitter Saturation Voltage VBE (sat) IC=500mA, IB=50mA MIN 60 50 5.0 60 30 DYNAMIC CHARACTERISTICS Transition Frequency Output Capacitance fT VCE=10V, IC=50mA Cob VCB=10V,IE=0, f=1MHz NPN PNP CLASSIFICATION *hFE CSB764_CSD863Rev020206E D 60 - 120 E 100 - 200 TYP MAX 1.0 1.0 320 0.5 0.7 1.2 TYP150 TYP12 TYP20 F 160 - 320 UNITS V V V A A W ºC ºC UNITS V V V µA µA V V V MHz pF pF Continental Device India Limited Data Sheet Page 1 of 4 CSB764 PNP CSD863 NPN TO-92L Plastic Package CSB764_CSD863Rev020206E Continental Device India Limited Data Shee.