2N6039 Datasheet

2N6039 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C unless ot.

Features

ess otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEV VCE=Rated VCEO, VBE=1.5V ICEV VCE=Rated VCEO, VBE=1.5V, TC=125°C ICEO VCE=Rated VCEO IEBO VEB=5.0V BVCEO IC=100mA (2N6034, 2N6037) 40 BVCEO IC=100mA (2N6035, 2N6038) 60 BVCEO IC=100mA (2N6036, 2N6039) 80 VCE(SAT) IC=2.0A, IB=8.0mA VCE(SAT) IC=4.0A, IB=40mA VBE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=2.0A hFE VCE=3.0V, IC=500mA 500 hFE VCE=3.0V, IC=2.0A 750 hFE VCE=3.0V, IC=4.0A 100 fT VCE=10V, IC=750mA, f=1.0MHz 25 Cob VCB=10V, IE=0, f=100kHz (PNP) Cob VCB=10V, IE=0, f=100kHz (NPN) .