KTC4076 Datasheet

KTC4076 NPN Transistor

RoHS KTC4076 KTC4076 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 100 mW (Tamb=25℃) 1. 01 REF .,LCollector current 0. 30 2. 00¡ À0. 05 ICM: 500 Collector-base voltage mA OV(BR)CBO: 35 V 1. 30¡ À0. 03 Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-32.

Features

Power dissipation TPCM: 100 mW (Tamb=25℃) 1. 01 REF .,LCollector current 0. 30 2. 00¡ À0. 05 ICM: 500 Collector-base voltage mA OV(BR)CBO: 35 V 1. 30¡ À0. 03 Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-323 1. BASE 2. EMITTER 3. COLLECTOR 1. 25¡ À0. 05 2. 30¡ À0. 05 Unit: mm ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage OCollector-emitter breakdown voltage Emitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain ECollector-emitter saturat.