BZT55C2V4 Datasheet

BZT55C2V4 SILICON EPITAXIAL PLANAR ZENER DIODES

BZT55 Series SILICON EPITAXIAL PLANAR ZENER DIODES Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise LS-34 Applications • Voltage stabilization QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta =.

Features

• Very sharp reverse characteristic
• Low reverse current level
• Available with tighter tolerances
• Very high stability
• Low noise LS-34 Applications
• Voltage stabilization QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Z-Current Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air On PC board 50 mm X 50 mm X 1.6 mm Forward Voltage at IF = 100 mA Symbol Ptot IZ Tj TS Value 500 Ptot / VZ 175 - 65 to + 175 Unit mW mA OC OC Symbol RthJA VF Max. 500 1.5 Unit K/W.