| No. | Part # | Manufacturer | Description | Datasheet |
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Hitachi Semiconductor |
2SB647 10 320 — –1 Typ Max Unit Test conditions — — — –10 200 — –1 V V V V µA I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –100 V, IE = 0 VCE = –5 V, I C = –150 mA*2 VCE = –5 V, I C = –500 mA*2 I C = –500 mA, I B = –50 mA*2 VCE = –5 |
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Renesas Technology |
PNP Transistor |
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Hitachi Semiconductor |
PNP Transistor nit Test conditions — — — –10 200 — –1 V V V V µA I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –100 V, IE = 0 VCE = –5 V, I C = –150 mA*2 VCE = –5 V, I C = –500 mA*2 I C = –500 mA, I B = –50 mA*2 VCE = –5 V, I C = –150 mA*2 T |
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Renesas Technology |
PNP Transistor |
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MCC |
PNP Transistor • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Capable of 0.9Watts of Power Dissipation. • Collector-current -1.0A • Collector-base Voltage 120V • Operating and storage junction temperature range: -55OC to +150OC • Hal |
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MCC |
PNP Transistor • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Capable of 0.9Watts of Power Dissipation. • Collector-current -1.0A • Collector-base Voltage 120V • Operating and storage junction temperature range: -55OC to +150OC • Hal |
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Hitachi Semiconductor |
PNP Transistor nit Test conditions — — — –10 200 — –1 V V V V µA I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –100 V, IE = 0 VCE = –5 V, I C = –150 mA*2 VCE = –5 V, I C = –500 mA*2 I C = –500 mA, I B = –50 mA*2 VCE = –5 V, I C = –150 mA*2 T |
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UTC |
PNP Transistor ature TJ TSTG 150 -55 ~ +150 °C °C Notes: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW≤1 |
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BLUE ROCKET ELECTRONICS |
Silicon PNP transistor 2SD667(A)。 Complementary pair with 2SD667(A). / Applications 。 Low frequency power amplifier. / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Ran |
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MCC |
PNP Transistor • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Capable of 0.9Watts of Power Dissipation. • Collector-current -1.0A • Collector-base Voltage 120V • Operating and storage junction temperature range: -55OC to +150OC • Hal |
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MCC |
PNP Transistor • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Capable of 0.9Watts of Power Dissipation. • Collector-current -1.0A • Collector-base Voltage 120V • Operating and storage junction temperature range: -55OC to +150OC • Hal |
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SeCoS |
PNP Transistor Power Amplifier Applications . Low Frequency Power Amplifier CLASSIFICATION OF hFE Product-Rank 2SB647A-B Range 60~120 2SB647A-C 100~200 TO-92MOD AD B K EF C Collector Base Emitter N GH Emitter Collector M Base LJ REF. A |
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MCC |
PNP Transistor • Low Frequency Power Amplifier • Complementary Pair with 2SD667 • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant ("P"Suffix designates x Compliant. See ordering information) 2SB647L PNP Pl |
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BLUE ROCKET ELECTRONICS |
Silicon PNP transistor 2SD667(A)。 Complementary pair with 2SD667(A). / Applications 。 Low frequency power amplifier. / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Ran |
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MCC |
PNP Transistor • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Capable of 0.9Watts of Power Dissipation. • Collector-current -1.0A • Collector-base Voltage 120V • Operating and storage junction temperature range: -55OC to +150OC • Hal |
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