| No. | Part # | Manufacturer | Description | Datasheet |
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Toshiba |
SILICON NPN TRANSISTOR • Excellent Switching Time (I C=3A) : t r=1.0ys Max. tf=1.0ys Max. • High Collector Breakdown Voltage : V CEO=400V INDUSTRIAL APPLICATIONS Unit in mm 01&5 tQl m+C.12 014.0-0.10 jZflO^Q05 24.38- 0.05 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Co |
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