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Infineon Technologies AG |
Silicon Schottky Diodes 25W BAS125-04W...06W 1For calculation of R thJA please refer to Application Note Thermal Resistance RthJS K/W 230 265 1 Nov-15-2001 BAS125W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. D |
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Siemens Semiconductor Group |
Silicon Schottky Diodes pation, TS ≤ 25 ˚C 3) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR IF IFSM Ptot Tj Tstg Values 25 100 500 250 150 – 55 … + 150 Unit V mA mW ˚C 725 56 |
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Siemens Semiconductor Group |
Preliminary data Silicon Schottky Diodes Junction - soldering point, BAS125-04W...06W 1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm Semiconductor Group 1 Dec-20-1996 BAS 125W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristi |
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