| No. | Part # | Manufacturer | Description | Datasheet |
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Hitachi Semiconductor |
2sC2898 = 400 V, IE = 0 VCE = 350 V, RBE = ∞ VCE = 5 V, IC = 4 A*1 VCE = 5 V, IC = 8 A*1 V V µs µs µs I C = 8 A, IB1 = –IB2 = 1.6 A, VCC ≅ 150 V I C = 4 A, IB = 0.8 A*1 V(BR)EBO I CBO I CEO 7 — — 15 7 — — — — — — — — — — — — — — — — 50 50 — — 1.0 1.5 0. |
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INCHANGE |
NPN Transistor ONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= |
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Hitachi Semiconductor |
Silicon NPN Transistor = 5 V, IC = 4 A*1 VCE = 5 V, IC = 8 A*1 V V µs µs µs I C = 8 A, IB1 = –IB2 = 1.6 A, VCC ≅ 150 V I C = 4 A, IB = 0.8 A*1 V(BR)EBO I CBO I CEO 7 — — 15 7 — — — — — — — — — — — — — — — — 50 50 — — 1.0 1.5 0.8 2.0 0.8 V µA µA DC current transfer ra |
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SavantIC |
SILICON POWER TRANSISTOR ut-off current DC current gain DC current gain CONDITIONS IC=0.2A; L=100mH IE=10mA ;IC=0 IC=4.0A; IB=0.8A(pulse test) IC=4.0A; IB=0.8A(pulse test) VCB=400V; IE=0 VCE=350V; RBE=> IC=4A ; VCE=5V(pulse test) IC=8A ; VCE=5V(pulse test) 15 7 MIN 400 7 2S |
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