| No. | Part # | Manufacturer | Description | Datasheet |
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Hi-Sincerity Mocroelectronics |
Dual N-Channel Enhancement-Mode MOSFET • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power and Current Handing Capability • Fully Characterized Avalanche Voltage and Current • Ideal for Li ion Battery Pack Appl |
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