| No. | Part # | Manufacturer | Description | Datasheet |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating mounting. Package Dimensions unit:mm 2076B 16.0 3.4 [2SK1452] 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 1.0 123 Specifications Absolute |
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Inchange Semiconductor |
N-Channel MOSFET Transistor urce On-stage Resistance VGS=10V; ID=6A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 VSD Diode Forward Voltage IF=10A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V |
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Sanyo |
2SK1452 · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating mounting. Package Dimensions unit:mm 2076B 16.0 3.4 [2SK1452] 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 1.0 123 Specifications Absolute |
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