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EGmicro |
Three-stage lead-acid battery charge management chip 5 4.1. ............................................................................................................................................. 5 4.2. ........................................................................................... |
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Freescale Semiconductor |
H-Bridge Driver • Overtemperature, short-circuit protection, and overvoltage protection against transients up to 40 V at VBAT, typical • RDSON = 150 m for each output transistor at 25 C • Continuous DC load current 5. |
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SavantIC |
2SC3181 ector-emitter breakdown voltage IC=50mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=6A; IB=0.6A VBE Base-emitter voltage IC=4A ; VCE=5V ICBO Collector cut-off current VCB=120V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC |
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National Semiconductor |
Operational Amplifiers a factor of ten increase in speed over general purpose devices without sacrificing DC performance. The LM118 series has internal unity gain frequency compensation. This considerably simplifies its application since no external components are necessar |
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NEC |
2SB1318 |
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BPS |
Dimmable PSR Single-Stage APFC Offline LED Controller |
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SavantIC |
SILICON POWER TRANSISTOR Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ,IB=0 IC=7A; IB=0.7A IC=5A ; VCE=5V VCB=140V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; V |
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MediaTek |
PMIC Specification / power management ......................................................................................................................................................... 6 Applications ................................................................................. |
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Micro Electronics |
NPN TRANSISTOR |
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Motorola |
Wireless Power Management three independently enabled Low Drop Out (LDO) Linear Voltage Regulators for powering baseband, audio, RF/IF, and interface circuitry. A comparator with logic-enabled hysteresis and one scaled input is provided for use as a low-battery detector to pr |
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Fairchild Semiconductor |
High Speed MOSFET Gate Driver Optocoupler ■ Guaranteed operating temperature range of -20°C to ■ ■ ■ ■ ■ ■ ■ ■ ■ tm Description The FOD3181 is a 0.5A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a gallium aluminum arsenide (AlGaAs) light emitting diode optically |
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Powerex Power Semiconductors |
AC Switch SCR T T T T Electrically Isolated Heatsinking Compression Bonded Elements Metal Baseplate Low Thermal Impedance for Improved Current Capability Benefits: T No Additional Insulation Components Required T Easy Installation T No Clamping Components Requir |
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Analog Devices |
Supervisory Circuits with Watchdog and Manual Reset 26 reset threshold options 2.5 V to 5 V in 100 mV increments 4 reset timeout options 1 ms, 20 ms, 140 ms, and 1120 ms (minimum) 4 watchdog timeout options 6.3 ms, 102 ms, 1600 ms, and 25.6 sec (typical) Manual reset input Reset output stages Push-pul |
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Analog Devices |
Logarithmic Detector/Controller ► Wide bandwidth: 1 MHz to 8 GHz ► High accuracy: ±1.0 dB over 55 dB range (f < 5.8 GHz) ► Stability over temperature: ±0.5 dB ► Low noise measurement/controller output (VOUT) ► Pulse response time: 10 ns/12 ns (fall/rise) ► Integrated temperature se |
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Accurate Screw Machine |
(903xxx-xx) Lock Washers 5 4.15 5.15 6.20 B ID Max 2.40 2.80 3.30 3.80 4.30 5.30 6.50 C Thickness Min Max .25 .35 .25 .35 .35 .50 .40 .55 .45 .60 .55 .70 .55 .70 B ID Max .095 .123 .150 .176 .204 .267 .332 .398 .464 C Thickness Min Max .010 .015 .015 .019 .017 .021 .018 .0 |
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Injoinic |
Full-integrated fast charge and discharge SOC Support Mainstream Fast Charge Mode Built-in TYPE-C DRP protocol, supports single port input and output function. Built-in Qualcomm Quick Charge 2.0/3.0 output fast charge protocol, with DCP Mode. UL Certificate No：4787391468-2 https://www. |
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BETTER POWER |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET *Simple Drive Requirement *Lower Gate Charge *Fast Switching Package Dimensions TO-252 3318 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0 |
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qorvo |
Dual-Channel Switch LNA Module • 2.3-3.8 GHz Frequency Range • Integrates dual channels of a two-stage LNA with a high power switch • Max RF Input power: 10W Pavg (8 dB PAR) • 1.3 dB Noise Figure (Rx mode) • 30.5 dB Gain (Rx mode) • +33.5 dBm OIP3 (Rx mode) • 0.5 dB Insertion Loss |
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ISSI |
LINEAR CURRENT DRIVER Output current programmable from 10mA to 75mA Tail duty cycle programmable from 1% to 95% Linear voltage regulator to optimize consumption on device Low dropout voltage of 0.8V@35mA Slew rate control on each output for better EMI performanc |
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TOSHIBA |
2SC3180 |
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