| No. | Part # | Manufacturer | Description | Datasheet |
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Motorola |
RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs otection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 125 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large –Signal Impedance Parameters • |
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Motorola |
RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs otection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 125 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large –Signal Impedance Parameters • |
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