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UPA2733GR

NEC
Part Number UPA2733GR
Manufacturer NEC
Description P-CHANNEL POWER MOSFET
Published Jun 12, 2016
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2733GR SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The μ PA2733GR is P-chan...
Datasheet PDF File UPA2733GR PDF File

UPA2733GR
UPA2733GR

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2733GR SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The μ PA2733GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on.
PACKAGE DRAWING (Unit: mm) 85 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain FEATURES • Low on-state resistance RDS(on)1 = 38 mΩ MAX.
(VGS = −10 V, ID = −2.
5 A) RDS(on)2 = 53 mΩ MAX.
(VGS = −4.
5 V, ID = −2.
5 A) • Low Ciss: Ciss = 870 pF TYP.
• Built-in gate protection diode • Small and surface mount package (Power SOP8) 1.
8 MAX.
1.
44 14 5.
37 MAX.
6.
0 ±0.
3 4.
4 +0.
10 –0.
05 0.
15 1.
27 0.
78 MAX.
0.
5 ±0.
2 0.
8 0.
10 0.
05 MIN.
ORDERING INFORMATION 0.
40 +0.
10 –0.
05 0.
12 M PART NUMBER PACKAGE μ PA2733GR-E1 μ PA2733GR-E1-A Note Power SOP8 Power SOP8 μ PA2733GR-E2 μ PA2733GR-E2-A Note Power SOP8 Power SOP8 Note Pb-free (This product does not contain Pb in external electrode and other parts.
) ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.
) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Note2 Total Power Dissipation (PW = 10 sec) Note2 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 −30 m20 m5 m20 1.
1 2.
5 V V A A W W Channel Temperature Storage Temperature Tch 150 °C Tstg –55 to +150 °C Notes 1.
PW ≤ 10 μs, Duty Cycle ≤ 1% 2.
Mounted on glass epoxy board of 1 inch x 1 inch x 0.
8 mm EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
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