8N05 Datasheet

8N05 N-Channel MOSFET Transistor

·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC.

Features

te Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=250µA IS=8A ;VGS= 0 VGS= 10V; ID=4A VGS= ±20V;VDS= 0 VDS= 50V; VGS= 0 MIN TYPE MAX UNIT 50 V 2.0 4.0 V 1.4 V 0.8 Ω ±100 nA 20 µA isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn .