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AP2623Y Datasheet PDF


Part Number AP2623Y
Manufacturer Advanced Power Electronics
Title P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description D1 G2 S1 D2 S2 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient...
Features Data and specifications subject to change without notice 200614041 AP2623Y Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drai...

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Datasheet AP2623Y PDF File








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AP2623GY : D1 G2 S1 D2 S2 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications. BVDSS RDS(ON) ID -30V 170mΩ - 2A D2 S1 D1 SOT-26 G2 S2 G1 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resi.

AP2623GY-HF : AP2623 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-26 package is widely used for all commercialindustrial applications. G1 BVDSS RDS(ON) ID D1 G2 S1 -30V 170mΩ - 2A D2 S2 Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temp.




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