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2N6488


Part Number 2N6488
Manufacturer Central Semiconductor
Title COMPLEMENTARY SILICON POWER TRANSISTORS
Description The CENTRAL SEMICONDUCTOR 2N6486, 2N6489 series types are complementary silicon power transistors designed for general purpose switching and ampl...
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2N6480 : _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 702 OOCD3LJ1] Solid State Division Power Transistors 2N6479 2N6481 2N6480 2N6482 Radiation-Hardened Silicon N-P-N Power Transistors Epitaxial-Planar Types for Aerospace and Military Applications (RADIALI H·1354 Rated for Operation in Radiation Environment. with Cumulative Neutron Fluenee Levels to 1 x 1014 Neutrons/em2 and Gamma Intensity to 1 x 108 Rad(Sills RCA types 2N6479, 2N6480, 2N6481, and 2N6482- are epitaxial silicon n-p-n planar power-switching transistors. They are designed for aerospace applications in which they might be subjected to extreme neutron and gamma-ray exposure. The 2N6479, 2N6480, 2N6481, a.

2N6481 : _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 702 OOCD3LJ1] Solid State Division Power Transistors 2N6479 2N6481 2N6480 2N6482 Radiation-Hardened Silicon N-P-N Power Transistors Epitaxial-Planar Types for Aerospace and Military Applications (RADIALI H·1354 Rated for Operation in Radiation Environment. with Cumulative Neutron Fluenee Levels to 1 x 1014 Neutrons/em2 and Gamma Intensity to 1 x 108 Rad(Sills RCA types 2N6479, 2N6480, 2N6481, and 2N6482- are epitaxial silicon n-p-n planar power-switching transistors. They are designed for aerospace applications in which they might be subjected to extreme neutron and gamma-ray exposure. The 2N6479, 2N6480, 2N6481, a.

2N6482 : _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 702 OOCD3LJ1] Solid State Division Power Transistors 2N6479 2N6481 2N6480 2N6482 Radiation-Hardened Silicon N-P-N Power Transistors Epitaxial-Planar Types for Aerospace and Military Applications (RADIALI H·1354 Rated for Operation in Radiation Environment. with Cumulative Neutron Fluenee Levels to 1 x 1014 Neutrons/em2 and Gamma Intensity to 1 x 108 Rad(Sills RCA types 2N6479, 2N6480, 2N6481, and 2N6482- are epitaxial silicon n-p-n planar power-switching transistors. They are designed for aerospace applications in which they might be subjected to extreme neutron and gamma-ray exposure. The 2N6479, 2N6480, 2N6481, a.

2N6486 : ·With TO-220 package ·Excellent safe operating area ·Complement to type 2N6489 2N6490 2N6491 respectively APPLICATIONS ·Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6486 VCBO Collector-base voltage 2N6487 2N6488 2N6486 VCEO Collector-emitter voltage 2N6487 2N6488 VEBO Emitter-base voltage IC Collector current IB Base current PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance fr.

2N6486 : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6486, 2N6487, 2N6488 2N6489, 2N6490, 2N6491 2N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS 2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications N LH BF C E A OO 12 3 K D G J M All diminsions in mm. PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 DIM MIN . MAX. A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D 0.90 E 1.15 1.40 F 3.75 3.88 G 2.29 2.79 H 2.54 3.43 J 0.56 K 12.70 14.73 L 2.80 4.07 M 2.03 2.92 N 31.24 O DEG 7 4 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter.

2N6486 : The CENTRAL SEMICONDUCTOR 2N6486, 2N6489 series types are complementary silicon power transistors designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Continuous Base Current IB Power Dissipation PD Power Dissipation (TA=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJC 2N6486 2N6489 50 2N6487 2N6490 70 2N6488 2N6491 90 40 60 80 5.0 15 5.0 75 1.8 -65 to +150 1.67 ELECTRICAL CHARACTERISTICS: (TC=25°C) SY.

2N6487 : 2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • High DC Current Gain • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6487, 2N6490 2N6488, 2N6491 VCEO 60 80 Vdc Collector−Base Voltage 2N6487, 2N6490 2N6488, 2N6491 VCB Vdc 70 90 Emitter−Base Voltage Collector Current − Continuous Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C VEB 5.0 Vdc IC 15 Adc IB 5.0 Adc PD 75 W 0.6 W/°.

2N6487 : The 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors in Jedec TO-220 plastic package. They are inteded for use in power linear and low frequency switching applications. The 2N6487 complementary type is 2N6490. TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEX V CEO V EBO IC IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE =-1.5V,R BE =100 Ω ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c ≤ 25 C Storage Temperature Max. Operating Junction Temperature o Value 2N6487 2N6490 70 70 60 5 15 5 75 -65 to 150 150 2N6488 90 9.

2N6487 : NPN POWER TRANSISTORS 2N6487 60 VOLTS 15 AMP, 75 WATTS These are designed for use in general-purpose amplifier and switching applications. Features: • DC Current Gain specified to 15 Amperes =hFE = 20-150 @ IC = 5.0 A 5.0 (Min) @ IC = 15A • Collector-Emitter Sustaining VoltageVCEO(sus) = 60 V (Min) • TO-220AB Compact Package NPN COLLECTOR --© EMITTER CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERSI TERM.l TERM.2 ...----,.404110.26] .38019.651 .::~I~.~~ -II.J..' . . '19014'831~ .170.14321 '-II .055(1.391 .04811.221 __+ -. .26516.731 1 .24516.221 , CASE .r L--+--I-----Ifr-;-., TERMEFPEERRAENTUCERE .35519.021 ~OINT .32518.251 ~ .13013.31 f' ~591 .g~I~~;ll -.

2N6487 : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6486, 2N6487, 2N6488 2N6489, 2N6490, 2N6491 2N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS 2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications N LH BF C E A OO 12 3 K D G J M All diminsions in mm. PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 DIM MIN . MAX. A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D 0.90 E 1.15 1.40 F 3.75 3.88 G 2.29 2.79 H 2.54 3.43 J 0.56 K 12.70 14.73 L 2.80 4.07 M 2.03 2.92 N 31.24 O DEG 7 4 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter.

2N6487 : The CENTRAL SEMICONDUCTOR 2N6486, 2N6489 series types are complementary silicon power transistors designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Continuous Base Current IB Power Dissipation PD Power Dissipation (TA=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJC 2N6486 2N6489 50 2N6487 2N6490 70 2N6488 2N6491 90 40 60 80 5.0 15 5.0 75 1.8 -65 to +150 1.67 ELECTRICAL CHARACTERISTICS: (TC=25°C) SY.

2N6487 : ·With TO-220 package ·Excellent safe operating area ·Complement to type 2N6489 2N6490 2N6491 respectively APPLICATIONS ·Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6486 VCBO Collector-base voltage 2N6487 2N6488 2N6486 VCEO Collector-emitter voltage 2N6487 2N6488 VEBO Emitter-base voltage IC Collector current IB Base current PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance fr.

2N6488 : The 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors in Jedec TO-220 plastic package. They are inteded for use in power linear and low frequency switching applications. The 2N6487 complementary type is 2N6490. TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEX V CEO V EBO IC IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE =-1.5V,R BE =100 Ω ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c ≤ 25 C Storage Temperature Max. Operating Junction Temperature o Value 2N6487 2N6490 70 70 60 5 15 5 75 -65 to 150 150 2N6488 90 9.

2N6488 : 2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • High DC Current Gain • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6487, 2N6490 2N6488, 2N6491 VCEO 60 80 Vdc Collector−Base Voltage 2N6487, 2N6490 2N6488, 2N6491 VCB Vdc 70 90 Emitter−Base Voltage Collector Current − Continuous Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C VEB 5.0 Vdc IC 15 Adc IB 5.0 Adc PD 75 W 0.6 W/°.

2N6488 : The 2N6488 is a silicon NPN power transistor in a TO−220 plastic package intended for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified to 15A: hFE = 20 − 150 @ IC = 5A = 5 (Min) @ IC = 15A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 80V (Min) D High Current Gain−Bandwidth Product: fT = 5MHz (Min) @ IC = 1A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 80V Collector−Base Voltage, VCB 90V Emitter−Base Vo.

2N6488 : ·DC Current Gain Specified to 15 Amperes- : hFE =20-150@ IC= 5.0A =5.0(Min)@ IC=15A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)=80Vdc(Min) ·Complement to Type 2N6491 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 90 VCEO Collector-Emitter Voltage 80 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 IB Base Current 5 Collector Power Dissipation @ TC=25℃ 75 PC Collector Power Dissipation @ Ta=25℃ 1.8 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL P.

2N6488 : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6486, 2N6487, 2N6488 2N6489, 2N6490, 2N6491 2N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS 2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications N LH BF C E A OO 12 3 K D G J M All diminsions in mm. PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 DIM MIN . MAX. A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D 0.90 E 1.15 1.40 F 3.75 3.88 G 2.29 2.79 H 2.54 3.43 J 0.56 K 12.70 14.73 L 2.80 4.07 M 2.03 2.92 N 31.24 O DEG 7 4 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter.




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