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MMBD353


Part Number MMBD353
Manufacturer LGE
Title Dual Hot Carrier Mixer Diodes
Description MMBD352-355 Dual Hot Carrier Mixer Diodes SOT-23 Features — Very low capacitance— Less than 1.0pF@zero V. — Low forward voltage—IF=10mA. — Power ...
Features — Very low capacitance— Less than 1.0pF@zero V. — Low forward voltage—IF=10mA. — Power dissipation Pd=300mW — Pb/RoHS Free Applications — Designed primarily for UHF mixer applications. Dimensions in inches and (millimeters) MMBD352 MMBD353 Ordering Information Type No. Marking MMBD354 MMBD355...

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MMBD352 : MMBD101/MMBD352/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 250 mW FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF=10mA • Extremely Fast Switching Speed • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case : SOT-23, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx weight : 0.0003 ounces, 0.0084 grams MAXIMUM RATINGS PARAMETER Marking Code Reverse Voltage Forword Power Dissipation Junction Temperature Range Storage Temperature Range Circuit Figure THERMAL CHARACTERISTICS PARAMETER Termal.

MMBD352 : ® WON-TOP ELECTRONICS MMBD352 / 353 / 354 / 355 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Very Low Capacitance L  Low Forward Voltage  PN Junction Guard Ring for Transient and A ESD Protection  For General Purpose Switching Applications  Plastic Material – UL Recognition Flammability B C Classification 94V-0 M Mechanical Data  Case: SOT-23, Molded Plastic  Terminals: Plated Leads Solderable per ED H K J SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 MIL-STD-202, Method 208  Polarity: See Diagrams Below  Weight: 0.008 grams (approx.)  Marking: Device Code, See Page 3  Mounting Position: Any  Lead Free: For RoHS / Lead Free Ve.

MMBD352 : MMBD352-355 Dual Hot Carrier Mixer Diodes SOT-23 Features — Very low capacitance— Less than 1.0pF@zero V. — Low forward voltage—IF=10mA. — Power dissipation Pd=300mW — Pb/RoHS Free Applications — Designed primarily for UHF mixer applications. Dimensions in inches and (millimeters) MMBD352 MMBD353 Ordering Information Type No. Marking MMBD354 MMBD355 Package Code MMBD352 MMBD353 MMBD354 MMBD355 M5G M4F M6H MJ1 SOT-23 SOT-23 SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Continuous reverse voltage VR Power Dissipation Pd Thermal Resistance,Junction-to-Ambient RθJA Junction and storage temperature TJ,TSTG Limits 7.0 300 417 -55-150 Uni.

MMBD352 : Dual Hot Carrier Mixer Diodes FEATURES z Very low capacitance— Less than 1.0pF@zero V. Pb Lead-free z Low forward voltage—IF=10mA. z Power dissipation Pd=300mW z Pb-Free package is available. APPLICATIONS z Designed primarily for UHF mixer applications. Production specification MMBD352/353/354/355 MMBD352 MMBD353 MMBD354 MMBD355 ORDERING INFORMATION Type No. Marking MMBD352 MMBD353 MMBD354 MMBD355 M5G M4F M6H MJ1 SOT-23 Package Code SOT-23 SOT-23 SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Continuous reverse voltage VR Power Dissipation Pd Thermal Resistance,Junction-to-Ambient RθJA Junction and storage temperature TJ,TSTG Li.

MMBD352 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352LT1/D Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 3 1 2 MAXIMUM RATINGS (EACH DIODE) Rating Continuous Reverse Voltage Symbol VR Value 7.0 Unit VCC 1 ANODE 3 CATHODE/ANODE 2 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Di.

MMBD352 : MAXIMUM RATINGS Rating Continuous Reverse Voltage Symbol vR THERMAL CHARACTERISTICS Characteristic Symbol •Total Device Dissipation, Ta = 25°C Derate above 25°C PD Storage Temperature Tstg "Thermal Resistance Junction to Ambient RftJA •Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Value 4 Max 350 2.8 150 357 Unit vcc Unit mW mW/°C °C °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Forward Voltage F(l = 10 mA) Reverse Voltage Leakage Current (Vr = 3.0 V) (V R = 4.0 V) Capacitance (Vr = V, f = 1.0 MHz) MMBD352 CASE 318-02/03 STYLE 11 SOT-23 (TO-236AA/AB) DUAL HOT CARRIER MIXER DIODE Symbol VF Min Max Unit | 0.25 10 .

MMBD352LT1 : www.DataSheet4U.com MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features 1 2 http://onsemi.com 3 SOT−23 (TO−236) CASE 318 • Very Low Capacitance − Less Than 1.0 pF @ Zero V • Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA • Pb−Free Packages are Available MAXIMUM RATINGS (EACH DIODE) Rating Continuous Reverse Voltage Symbol VR Value 7.0 Unit VCC 1 ANODE 3 CATHODE/ANODE MMBD352LT1 STYLE 11 2 CATHODE 1 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate abo.

MMBD352LT1 : LESHAN RADIO COMPANY, LTD. Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 3 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Continuous Reverse Voltage THERMALCHARACTERISTICS VR 7.0 V CC Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate (2) T A .

MMBD352LT1 : MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352LT1/D Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 3 1 2 MAXIMUM RATINGS (EACH DIODE) Rating Continuous Reverse Voltage Symbol VR Value 7.0 Unit VCC 1 ANODE 3 CATHODE/ANODE 2 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to A.

MMBD352LT1G : SOT−23 (TO−236) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warrant.

MMBD352W : MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 200 mW FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF=10mA • Extremely Fast Switching Speed • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case : SOT-323, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx weight : 0.0002 ounces, 0.005 grams MAXIMUM RATINGS (TA=25oC unless otherwise noted) Marking Code PAR AME T E R Reverse Voltage Forward Power Dissipation J unc ti o n Te mp e ra tur e Ra ng e S to r a g e Te mp e ra.

MMBD352W : ® WON-TOP ELECTRONICS MMBD352W SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Very Low Capacitance  Low Forward Voltage  PN Junction Guard Ring for Transient and ESD Protection  For General Purpose Switching Applications  Plastic Material – UL Recognition Flammability Classification 94V-0 B Mechanical Data  Case: SOT-323, Molded Plastic K  Terminals: Plated Leads Solderable per MIL-STD-202, Method 208  Polarity: See Diagram  Weight: 0.006 grams (approx.)  Mounting Position: Any  Marking: M5  Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 A ED H G TOP VIEW C J L M SOT-323 Dim Min A 0.25 Max 0.40 B 1.15 1.35 C 2.00 2.40.

MMBD352W : Production specification Schottky Barrier Diode FEATURES  Very low capacitance-less than 1.0Pf @zero volts. Pb Lead-free  Low forward voltage-0.5 Voltage(Typ.) @IF=10mA. MMBD352W APPLICATIONS  For UHF mixer applications. ORDERING INFORMATION Type No. Marking MMBD352W M5 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Continuous reverse voltage Power Dissipation Thermal resistance junction-to-ambient Junction temperature Storage temperature range VR Pd RθJA Tj Tstg 7.0 200 625 150 -55 to +150 Unit V mW ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Reverse current Forward voltage S.

MMBD352WT1 : www.DataSheet4U.com MMBD352WT1 Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ Zero Volts • Low Forward Voltage − 0.5 Volts (Typ) @ IF = 10 mA • Pb−Free Package is Available http://onsemi.com 1 ANODE 3 CATHODE/ANODE 2 CATHODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Symbol VR Value 7.0 Unit VCC 3 1 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneou.

MMBD352WT1 : .

MMBD352WT1 : MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352WT1/D Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA MMBD352WT1 3 1 2 1 ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Symbol VR Value 7.0 Unit VCC 3 CATHODE/ANODE 2 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrat.

MMBD352WT1G : MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features  Very Low Capacitance − Less Than 1.0 pF @ 0 V  Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA  AEC Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 7.0 VCC Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings onl.




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