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2N5883


Part Number 2N5883
Manufacturer Central Semiconductor
Title COMPLEMENTARY SILICON POWER TRANSISTORS
Description The CENTRAL SEMICONDUCTOR 2N5883, 2N5885 series types are complementary silicon epitaxial base transistors designed for power amplifier and switc...
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2N5880 : 2N5880 & 2N5882 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 7.0A • Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A Pin 1. Base 2. Emitter Collector(Case) Maximum Ratings Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 Dimensions : Millimetres Characteristic Symbol Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous -Peak Base Current Tot.

2N5880 : ·With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5881 2N5882 APPLICATIONS ·For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5879 2N5880 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N5879 Collector-base voltage 2N5880 2N5879 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N5880 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -80 -5 -15 -30 -5 160 150 -65~200 V A A A W Open emitter -80 -60 V CONDITIONS VALUE -60 V U.

2N5881 : A A A A .

2N5881 : ·With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5879 2N5880 APPLICATIONS ·For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Emitter Collector Product Specification 2N5881 2N5882 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER VCBO Collector-base voltage 2N5881 2N5882 VCEO Collector-emitter voltage 2N5881 2N5882 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL .

2N5881 : 2N5881 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 1 – Base TO3 (TO204AA) PINOUTS 2 – Emitter Case - Collector Bipolar NPN Device. VCEO = 60V IC = 15A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. Parameter VCEO* IC(CONT) hFE ft PD Test Conditio.

2N5882 : The 2N5882 is a silicon NPN transistor in a TO−3 type package designed for use in general purpose power amplifier and switching applications. Features: D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 7A D Excellent DC Current Gain: hFE = 20 − 100 @ IC = 6A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 80V Collector−Base Voltage, VCBO . 80V Emitter−Base Voltage, VEBO . . .

2N5882 : ON Semiconductort Silicon NPN High-Power Transistor designed for general–purpose power amplifier and switching applications. 2N5882 ON Semiconductor Preferred Device • Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) • DC Current Gain — hFE = 20 (Min) @ IC = 6.0 Adc www.DataSheet4U.com • Low Collector — Emitter Saturation Voltage — VCE(sat) = 1.0 Vdc (Max) @ IC = 7.0 Adc • High Current — Gain–Bandwidth Product — fT = 4.0 MHz (Min) @ IC = 1.0 Adc MAXIMUM RATINGS (1) Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 15 AMPERE SILICON POWER TRANSISTOR 80 VOLTS 160 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ.

2N5882 : 2N5880 & 2N5882 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 7.0A • Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A Pin 1. Base 2. Emitter Collector(Case) Maximum Ratings Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 Dimensions : Millimetres Characteristic Symbol Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous -Peak Base Current Tot.

2N5882 : ·With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5879 2N5880 APPLICATIONS ·For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Emitter Collector Product Specification 2N5881 2N5882 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER VCBO Collector-base voltage 2N5881 2N5882 VCEO Collector-emitter voltage 2N5881 2N5882 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL .

2N5883 : A A A A .

2N5883 : 2N5883-2N5884 – PNP 2N5885-2N5886 – NPN High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON POWER TRANSISTORS FEATURES: • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number • Available Non-RoHS (standard) or RoHS compliant (add PBF suffix) MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Peak Base Current Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Thermal Resistance Junction to Case Symbol VCEO VCBO VEBO IC IB PD TJ, TSTG RθJC 2N5883 2N5885 2N5884 2N5886 60 80 60 80 .

2N5883 : SILICON EPITAXIAL PNP TRANSISTOR 2N5883 • High Voltage, Low Saturation Voltages. • Hermetic TO3 Metal Package. • Designed For Power Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Voltage -60V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -25A ICM Peak Collector Current -50A IB Base Current -7.5A PD Total Power Dissipation at TC = 25°C 200W Derate Above 25°C 1.14W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resist.

2N5883 : www.DataSheet4U.com 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features http://onsemi.com • Low Collector−Emitter Saturation Voltage − • • • • VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain − hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product − ft = 4.0 MHz (min) at IC = 1.0 Adc Pb−Free Packages are Available* 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 − 80 VOLTS, 200 WATTS ÎÎÎÎÎÎÎÎ.

2N5883 : ·With TO-3 package ·Complement to type 2N5885 2N5886 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER VCBO Collector-base voltage 2N5883 2N5884 VCEO Collector-emitter voltage 2N5883 2N5884 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance.

2N5883 : .

2N5884 : The 2N5884 and 2N5886 are complementary silicon power transistor in Jedec TO-3 metal case inteded for use in power linear amplifiers and switching applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter PNP NPN V CBO V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value 2N5884 2N5886 80 80 5 25 50 7.5 200 -65 to 200 200 V V V A A A W o o Unit C C For PNP types voltage and current values are negative. June 1997 1/4 2N5884 / 2N58.




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