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BUX98A Datasheet PDF


Part Number BUX98A
Manufacturer Comset Semiconductors
Title HIGH VOLTAGE FAST SWITCHING
Description NPN BUX98A HIGH VOLTAGE FAST SWITCHING The BUX98A is silicon multiepitaxial NPN transistor in Jedec TO-3. They are intended and industrial applic...
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BUX10 : The BUX10 is a silicon Multi-Epitaxial Planar NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEX VCEO VEBO IC ICM IB Ptot Tstg Tj Parameter Collector-base Voltage (IE = 0) Collector-emitter Voltage (VBE = - 1.5V) Collector-emitter Voltage (IB = 0) Emitter-base Voltage (IC = 0) Collector Current Collector Peak Current (tP 10 ms) Base Current Total Power Dissipation at Tcase Storage Temperature ≤ 25 oC Max Operating Junction Temperature March 2003 Value 160 160 125 7 25 30 5 150 -65 to 200 200 Unit V V V V A A A W oC o.

BUX10 : ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·Motor control ·Linear and switching industrial equipment PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 160 125 7 25 30 5 150 200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistan.

BUX10 : The BUX10 is a silicon multiepitaxial planar NPN transistor in a TO−3 type package designed for use in switching and linear applications in industrial equipment. Features: D High Current Capability D Fast Switching Speed Applications: D Motor Control D Linear and Switching Industrial Equipment Absolute Maximum Ratings: Collector−Emitter Voltage (IB = 0), VCEO . 125V Collector−Emitter Voltage (VBE = −1.5V), VCEX . 160V Collector−Base Voltage (IE = 0), VCBO . .

BUX10 : SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 160V VCEX Collector – Emitter Voltage VBE = -1.5V 160V VCEO Collector – Emitter Voltage 125V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 25A ICM Peak Collector Current tp = 10ms 30A IB Base Current 5A PD Total Power Dissipation at TC = 25°C 150W Derate Above 25°C 0.85W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIE.

BUX10 : ·High Switching Speed ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control ·Linear and switching industrial equipment Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 160 V 160 V 125 V 7 V 25 A 30 A 5 A 150 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL .

BUX10A : ·High Switching Speed ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for control amplifiers and power switching circuits, such as converters, inverters, switching regulators, and switching-control amplifiers. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCER VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temper.

BUX10P : ·High Switching Speed ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control ·Linear and switching industrial equipment Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 160 V 160 V 125 V 7 V 25 A 30 A 5 A 150 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL.

BUX10X : BUX10X MECHANICAL DATA Dimensions in mm(inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) NPN MULTI - EPITAXIAL POWER TRANSISTOR 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 22.23 (0.875) max. FEATURES • HIGH CURRENT • FAST SWITCHING • HIGH RELIABILITY 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) APPLICATIONS TO–3 PIN 1 — Base PIN 2 — Emitter Case is Collector. • POWER SWITCHING CIRCUITS • MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEX VCEO VEBO IC ICM IB Ptot Tstg, Tj Collector – Base Voltage (IE .

BUX11 : ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in switching and linear applications PINNING(see fig.2) PIN 1 2 3 DESCRIPTION Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 tp=10ms Open emitter Open base Open collector CONDITIONS VALUE 250 200 7 20 25 4 150 200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance j.

BUX11 : SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX11 • • • • High Current Capability. Hermetic TO3 Metal package. Designed For Switching and Linear Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEX VCEO VEBO IC ICM IB PD TJ Tstg Collector – Base Voltage VBE = -1.5V Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current tp = 10ms Peak Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range www.DataSheet.net/ 250V 250V 200V 7V 20A 25A 4A 110W 0.63W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbol.

BUX11 : NPN BUX11 HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR The BUX11 is silicon multiepitaxial planar NPN transistors in Jedec TO-3. They are intended for use in switching and linear appications in military and industrial equipments. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO VCEX IC ICM IB Pt TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Ratings IB = 0 IE = 0 IC = 0 VBE = -1.5V www.DataSheet.net/ Value 200 250 7.0 250 20 25 4 150 200 -65 to +200 Unit V V V V A A A W °C °C tp = 10ms @ TC =.

BUX11 : ·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control ·Linear and switching industrial equipment Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 250 V 250 V 200 V 7 V 20 A 25 A 4 A 150 W 200 ℃ -6.

BUX11A : .

BUX11N : BUX11N Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 160V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 20A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CONT) hFE ft PD Test .

BUX11N : ·Low Collector Saturation Voltage ·High Switching Speed ·High Current Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control ·Linear and switching industrial equipment Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCER VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 220 V 200 V 220 V 1.

BUX11P : ·Low Collector Saturation Voltage ·High Switching Speed ·High Current Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control ·Linear and switching industrial equipment Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 250 V 250 V 200 V 7 V 20 A 25 A 4 A 150 W 150 ℃ -.

BUX12 : BUX12 MECHANICAL DATA Dimensions in mm(inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) NPN MULTI - EPITAXIAL POWER TRANSISTOR 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 22.23 (0.875) max. FEATURES • HIGH CURRENT • FAST SWITCHING • HIGH RELIABILITY 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) APPLICATIONS TO–3 PIN 1 — Base PIN 2 — Emitter Case is Collector. • POWER SWITCHING CIRCUITS • MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEX VCEO VEBO IC ICM IB Ptot Tstg, Tj Collector – Base Voltage (IE =.




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