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2N6111


Part Number 2N6111
Manufacturer Central Semiconductor
Title COMPLEMENTARY SILICON POWER TRANSISTORS
Description The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, de...
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2N6110 : ·DC Current Gain- : hFE = 30-150@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -30V(Min) ··Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL .

2N6110 : File No. 676 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ oornLlD Power Transistors Solid State Division 2NI5106-2N61111, 21M6288-21Nl6293, 2!N16413D 21i\'l6416 COliector 2N6106 2N6289 2N6108 2N6291 2N6110 2N6293 • ~ '\.---- Emitter ___ Base TO-220AA H-1534Rl lEpoftalltoal-lBase, S mean INI-P-INI and P-II\'I-rP VIEIRSAW A111" Trans istoll's General-Purpose Medium-Power Types for Switching and Amplifier Applications 2N6107 2N6288 2N6109 2N6290 2N6111 2N6292 2N6475 2N6473 2N6476 2N6474 A- Emitter ',4-- Collector Base H-1535Rl ,Features C Low saturation voltages " VERSAWATT package (molded silicone plastic) " Complementary n·p-n and p-n·p types " Thermal·cycling.

2N6110 : ·With TO-220 package ·With short pin APPLICATIONS ·Power amplifier and switching circuits applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6106 VCBO Collector-base voltage 2N6108 2N6110 2N6106 VCEO Collector-emitter voltage 2N6108 2N6110 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -30 -50 -70 -5 -7 -10 -3 40 150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTI.

2N6111 : The 2N6111 is an Epitaxial-Base PNP silicon transistor in Jedec TO-220 plastic package. It is intended for a wide variety of medium power switching and linear applications. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEX Collector-Emitter Voltage (RBE = 100 Ω) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current IB Base Current Ptot Total Dissipation at Tc = 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature December 2003 Value -40 -40 -30 -5 -7 -3 40 -65 to 150 150 Unit V V V V A A W oC oC 1/4 2N6111 THERMAL DATA Rthj-case Thermal Resist.

2N6111 : 2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • High DC Current Gain • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 VCEO 30 50 70 Vdc Collector−Base Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 VCB Vdc 40 60 80 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 2.

2N6111 : ·DC Current Gain- : hFE = 30-150@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -30V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHAR.

2N6111 : ·With TO-220 package ·Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS ·Power amplifier and switching circuits applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N6107 2N6109 2N6111 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6107 VCBO Collector-base voltage 2N6109 2N6111 2N6107 CEO www.DataSheet4U.com CONDITIONS VALUE -40 UNIT Open emitter -60 -80 -30 V V Collector-emitter voltage 2N6109 2N6111 Open base -50 -70 V VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage tem.

2N6111 : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6111 2N6111 PNP PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Applications N LH BF C E 12 3 A OO K D G J M All diminsions in mm. PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 DIM MIN. MAX. A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D 0.90 E 1.15 1.40 F 3.75 3.88 G 2.29 2.79 H 2.54 3.43 J 0.56 K 12.70 14.73 L 2.80 4.07 M 2.03 2.92 N 31.24 O DEG 7 4 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Co.

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2N6116 : 2N6116-2N6118 High-reliability discrete products and engineering services since 1977 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Repetitive peak forward current 100µs pulse width, 1.0% duty cycle 20µs pulse width, 1.0% duty cycle Non repetitive peak forward current 10µs pulse width DC forward anode current Derate above 25°C DC gate current Gate to cathode forward voltage Gate to cathode reverse voltage Gate to anode reverse voltage Anode to cathode volta.

2N6116 : .

2N6117 : 2N6116-2N6118 High-reliability discrete products and engineering services since 1977 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Repetitive peak forward current 100µs pulse width, 1.0% duty cycle 20µs pulse width, 1.0% duty cycle Non repetitive peak forward current 10µs pulse width DC forward anode current Derate above 25°C DC gate current Gate to cathode forward voltage Gate to cathode reverse voltage Gate to anode reverse voltage Anode to cathode volta.

2N6117 : .

2N6118 : 2N6116-2N6118 High-reliability discrete products and engineering services since 1977 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Repetitive peak forward current 100µs pulse width, 1.0% duty cycle 20µs pulse width, 1.0% duty cycle Non repetitive peak forward current 10µs pulse width DC forward anode current Derate above 25°C DC gate current Gate to cathode forward voltage Gate to cathode reverse voltage Gate to anode reverse voltage Anode to cathode volta.

2N6118 : .




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