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TIP30C


Part Number TIP30C
Manufacturer MCC
Title 1.0 Amp Complementary Silicon Power Transistors
Description MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !...
Features

• MHaoluongetinngfreTeoragvuaeila: b5leinu-plbosnMreaqxuiemsut mby adding suffix "-HF"
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) x Marking: Type Number
• Rth(jc) is 4.167OC/W, Rth(ja) is 62.5OC/W
• Epoxy meets UL 94 V-0 flammab...

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TIP30 : The CENTRAL SEMICONDUCTOR TIP30 series devices are silicon PNP epitaxial-base power transistors designed for power amplifier and high speed switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL TIP30 Collector-Base Voltage VCBO 40 Collector-Emitter Voltage VCEO 40 Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Continuous Base Current IB Power Dissipation PD Power Dissipation (TA=25°C) PD Operating and Storage Junction Temperature TJ, Tstg TIP30A TIP30B TIP30C 60 80 100 60 80 100 5.0 1.0 3.0 0.4 30 2.0 -65 to +150 UNITS V V V A A A W W °C ELECTRICAL CHARACTERISTICS: (.

TIP30 : SYMBOL Collector Emitter (sus) Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Power Dissipation upto Tc=25ºC Power Dissipation upto Ta=25ºC Derate above 25ºC Storage Temperature Junction Temperature VCEO VCBO VEBO IC ICM IB PD PD Tstg Tj TIP29 TIP30 40 40 TIP29A TIP29B TIP30A TIP30B 60 80 60 80 5.0 1.0 3.0 0.4 30 2.0 16 - 65 to +150 150 TIP29C TIP30C 100 100 UNIT V V V A A A W W mW/ºC ºC ºC THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 4.167 62.5 .

TIP30 : TIP30, TIP30A,TIP30B, TIP30C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JULY 1968 - REVISED MARCH 1997 q Designed for Complementary Use with the TIP29 Series 30 W at 25°C Case Temperature 1 A Continuous Collector Current 3 A Peak Collector Current Customer-Specified Selections Available B C E q q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIP30 Collector-base voltage (IE = 0) TIP30A TIP30B TIP30C TIP30 Collector-emitter voltage (IB = 0) TIP30A TIP30B TIP30C Emitter-base voltage Continuous collector current Peak col.

TIP30 : TIP30 Series(TIP30/30A/30B/30C) TIP30 Series(TIP30/30A/30B/30C) Medium Power Linear Switching Applications • Complementary to TIP29/29A/29B/29C 1 TO-220 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : TIP30 : TIP30A : TIP30B : TIP30C 1.Base Value - 40 - 60 - 80 - 100 - 40 - 60 - 80 - 100 -5 -1 -3 - 0.4 30 2 150 - 65 ~ 150 Units V V V V V V V V V A A A W W °C °C VCEO Collector-Emitter Voltage : TIP30 : TIP30A : TIP30B : TIP30C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junc.

TIP30 : ·With TO-220C package ·Complement to type TIP29/29A/29B/29C APPLICATIONS ·For use in general purpose power amplifer and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP30 VCBO Collector-base voltage TIP30A TIP30B Open emitter TIP30C TIP30 VCEO Collector-emitter voltage TIP30A TIP30B Open base TIP30C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature Open collector TC=25 VALUE -40 -60 -80 -100 -40 -60 -80 -100 -5 -1 -3 -0.4 30.

TIP30 : ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat) = -0.7V(Max.)@IC= -1.0A ·Complement to Type TIP29 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-base Voltage -40 V VCEO Collector-emitter Voltage -40 V VEBO Emitter-base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Pulse -3 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -0.4 A 30 w 150 ℃ Tst.

TIP30 : TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO−220 package. Features • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG VCEO 40 60 80 100 Vdc Collector − Base Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG VCB Vdc 40 60 80 100 Emitter − Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C VEB 5.0 Vdc IC 1.0 A.

TIP30 : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TIP29,A,B,C(NPN) TIP30,A,B,C(PNP) Features • • MHaoluongetinngfreTeoragvuaeila: b5leinu-plbosnMreaqxuiemsut mby adding suffix "-HF" • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) x Marking: Type Number • Rth(jc) is 4.167OC/W, Rth(ja) is 62.5OC/W • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Maximum Ratings 1.0 Amp Complementary Silicon Power Transistors Symbol Rating Rating Unit VCEO VCBO Collector-Emitter Voltage Collector-Base Voltage T.

TIP3055 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP3055/D Complementary Silicon Power Transistors TIP3055 PNP TIP2955 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS NPN ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ.

TIP3055 : TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20 − 70 @ IC = 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCER VCB VEB IC IB PD TJ, Tstg Value 60 70 100 7.0 15 7.0 90 0.72 – 65 to .

TIP3055 : The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. 3 2 1 TO-247 Figure 1. Internal schematic diagrams Table 1. Device summary Order code TIP2955 TIP3055 Marking TIP2955 TIP3055 Package TO-247 Packaging tube March 2008 . Rev 5 1/7 www.st.com 7 Absolute maximun rating 1 Absolute maximun rating Table 2. Symbol Absolute maximum rating Parameter Note: VCBO VCER VCEO VEBO IC IB Ptot Tstg TJ Collector-emitter voltage (IE = 0) Collector-emitter voltage (RBE = 100 Ω) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Base current Total dissipation at Tc ≤25°C Storage tem.

TIP3055 : ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type TIP2955 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 90 W Tj Junction Tmperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ .

TIP3055 : SEMICONDUCTORS PNP TIP2955 NPN TIP3055 SILICON POWER TRANSISTORS The TIP3055 is a NPN epitaxial-base transistor in TO3PN package.It is intended for power switching circuits, series and shunt regulators, output stage and hi-fi amplifiers. The complementary is the TIP2955 For PNP types Voltage and Curent are Negative. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC IB PT tJ ts Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation Junction Temperature Storage Temperature range Value 100 60 7 15 7 90 150 -65 to +150 Unit V V V A A W °C http://www.DataSheet4U.net/ @ Tmb 25° THERMAL CHARACTERI.

TIP3055F : ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type TIP2955F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 90 W Tj Junction Tmperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ .

TIP3055T : ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC = 4A ·Complement to Type TIP2955T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-base Voltage 5 V IC Collector Current-Continuous 10 A IC Collector Current-Peak 12 A IB Base Current 4 A PC Collector Power Dissipation@TC=25℃ 75 W Tj Junction Tmperature 150 ℃ Tstg Stor.

TIP30A : The CENTRAL SEMICONDUCTOR TIP30 series devices are silicon PNP epitaxial-base power transistors designed for power amplifier and high speed switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL TIP30 Collector-Base Voltage VCBO 40 Collector-Emitter Voltage VCEO 40 Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Continuous Base Current IB Power Dissipation PD Power Dissipation (TA=25°C) PD Operating and Storage Junction Temperature TJ, Tstg TIP30A TIP30B TIP30C 60 80 100 60 80 100 5.0 1.0 3.0 0.4 30 2.0 -65 to +150 UNITS V V V A A A W W °C ELECTRICAL CHARACTERISTICS: (.

TIP30A : SYMBOL Collector Emitter (sus) Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Power Dissipation upto Tc=25ºC Power Dissipation upto Ta=25ºC Derate above 25ºC Storage Temperature Junction Temperature VCEO VCBO VEBO IC ICM IB PD PD Tstg Tj TIP29 TIP30 40 40 TIP29A TIP29B TIP30A TIP30B 60 80 60 80 5.0 1.0 3.0 0.4 30 2.0 16 - 65 to +150 150 TIP29C TIP30C 100 100 UNIT V V V A A A W W mW/ºC ºC ºC THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 4.167 62.5 .




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