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BD242C

Part Number BD242C
Manufacturer Multicomp
Title General Purpose Amplifiers
Description BD241C & BD242C General Purpose Amplifiers Features: • NPN/PNP Plastic Power Transistors. • General Purpose Amplifier and Switching Applications. ...
Features
• NPN/PNP Plastic Power Transistors.
• General Purpose Amplifier and Switching Applications. BD241C NPN BD242C PNP TO-220 Plastic Package Pin Configuration 1. Base 2. Collector 3. Emitter 4. Collector Dimensions Minimum Maximum A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D - 0.90 E 1.15 1.40 F...

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BD242 : ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A -80V(Min)- BD242B; -100V(Min)- BD242C ·Complement to Type BD241/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD242 -55 BD242A -70 VCBO Collector-Base Voltage V BD242B -90 BD242C -115 BD242 -45 BD242A -60 VCEO Collector-Emitter Voltage V BD242B -80 BD242C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3.0 A ICM C.

BD242 : BD242/A/B/C BD242/A/B/C Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage : BD242 : BD242A : BD242B : BD242C Collector-Emitter Voltage : BD242 : BD242A : BD242B : BD242C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 45 - 60 - 80 - 100 - 55 - 70 - 90 - 115 -5 -3 -5 -1 40 150 - 65 ~ 150 Units V V V V V V V V V A A A W °C °C VCER VEBO IC ICP IB PC TJ TSTG Elect.

BD242 : .

BD242 : BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary Use with the BD241 Series 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. www.DataSheet4U.com MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD242 Collector-emitter voltage (RBE = 100 Ω) BD242A BD242B BD242C BD242 Collector-emitter voltage (IC = -30 mA) BD242A BD242B BD242C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base .

BD242 : ·With TO-220C package ·Complement to type BD241/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD242 VCBO Collector-base voltage BD242A BD242B Open emitter BD242C BD242 VCEO Collector-emitter voltage BD242A BD242B Open base BD242C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature Open collector TC=25 VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -3 -5 -1 40 150 -65~150 UNIT V V V A A A W S.

BD242 : PNP BD242 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD242, A, B, C are the PNP transistors mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The NPN complements are BD241, A, B, C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO VCER VEBO IC IB PT TJ TS Collector-Emitter Voltage (IB = 0) Collector-Emitter Voltage (RBE = 100 Ω) Emitter-Base Voltage (IC = 0) Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature IC ICM @ Tamb = 25° C @ Tcase = 25° C BD242 BD242A BD242B BD242C BD242 BD242A BD242B BD242C BD242 .

BD2425N50ATI : The BD2425N50ATI is a low cost, low profile sub-miniature unbalanced to balanced transformer designed for differential inputs and output locations on modern chipsets in an easy to use surface mount package. The BD2425N50ATI is ideal for high volume manufacturing and delivers higher performance than traditional ceramic baluns. The BD2425N50ATI has an unbalanced port impedance of 50Ω and 127+ j34Ω balanced port impedance. This transformation enables single ended signals to be applied to differential ports on modern integrated chipsets. The output ports have equal amplitude (-3dB) with 180 degree phase differential. The BD2425N50ATI is available on tape and reel for pick and place high volume m.

BD242A : ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A -80V(Min)- BD242B; -100V(Min)- BD242C ·Complement to Type BD241/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD242 -55 BD242A -70 VCBO Collector-Base Voltage V BD242B -90 BD242C -115 BD242 -45 BD242A -60 VCEO Collector-Emitter Voltage V BD242B -80 BD242C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3.0 A ICM C.

BD242A : The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD242A, BD242B and BD242C respectively. TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CER V CEO V EBO IC I CM IB P tot P tot T stg Tj Collector-Base Voltage (R BE = 100 Ω ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Total Dissipation at T amb ≤ 25 o C Storage Temperature Max. Operating Junction Temperature BD241A BD.

BD242A : BD242/A/B/C BD242/A/B/C Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage : BD242 : BD242A : BD242B : BD242C Collector-Emitter Voltage : BD242 : BD242A : BD242B : BD242C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 45 - 60 - 80 - 100 - 55 - 70 - 90 - 115 -5 -3 -5 -1 40 150 - 65 ~ 150 Units V V V V V V V V V A A A W °C °C VCER VEBO IC ICP IB PC TJ TSTG Elect.

BD242A : .

BD242A : BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary Use with the BD241 Series 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. www.DataSheet4U.com MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD242 Collector-emitter voltage (RBE = 100 Ω) BD242A BD242B BD242C BD242 Collector-emitter voltage (IC = -30 mA) BD242A BD242B BD242C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base .

BD242A : ·With TO-220C package ·Complement to type BD241/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD242 VCBO Collector-base voltage BD242A BD242B Open emitter BD242C BD242 VCEO Collector-emitter voltage BD242A BD242B Open base BD242C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature Open collector TC=25 VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -3 -5 -1 40 150 -65~150 UNIT V V V A A A W S.

BD242A : PNP BD242 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD242, A, B, C are the PNP transistors mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The NPN complements are BD241, A, B, C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO VCER VEBO IC IB PT TJ TS Collector-Emitter Voltage (IB = 0) Collector-Emitter Voltage (RBE = 100 Ω) Emitter-Base Voltage (IC = 0) Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature IC ICM @ Tamb = 25° C @ Tcase = 25° C BD242 BD242A BD242B BD242C BD242 BD242A BD242B BD242C BD242 .

BD242B : ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A -80V(Min)- BD242B; -100V(Min)- BD242C ·Complement to Type BD241/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD242 -55 BD242A -70 VCBO Collector-Base Voltage V BD242B -90 BD242C -115 BD242 -45 BD242A -60 VCEO Collector-Emitter Voltage V BD242B -80 BD242C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3.0 A ICM C.

BD242B : The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD242A, BD242B and BD242C respectively. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCER VCEO VEBO IC ICM IB Ptot Ptot Tstg Collector-Base Voltage (RBE = 100 Ω) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tc ≤ 25 oC Total Dissipation at Tamb ≤ 25 oC Storage Temperature December 2000 NPN PNP BD241A BD242A 70 60 Value BD241B BD242B 9.

BD242B : BD242/A/B/C BD242/A/B/C Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage : BD242 : BD242A : BD242B : BD242C Collector-Emitter Voltage : BD242 : BD242A : BD242B : BD242C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 45 - 60 - 80 - 100 - 55 - 70 - 90 - 115 -5 -3 -5 -1 40 150 - 65 ~ 150 Units V V V V V V V V V A A A W °C °C VCER VEBO IC ICP IB PC TJ TSTG Elect.




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