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MJD117


Part Number MJD117
Manufacturer Fairchild Semiconductor
Title PNP Silicon Darlington Transistor
Description MJD117 MJD117 D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Appli...
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MJD112 : TO-252 NPN 。Silicon NPN transistor in a TO-252 Plastic Package.  / Features ,E C TIP112 。 High DC current gain, built-in a damper diode at E-C,electrically similar to popular TIP112. / Applications 。 Medium power switching applications. / Equivalent Circuit / Pinning 12 3 4 PIN1:Base PIN 2,4:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 MJD112 Rev.E May.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current – Continuous(Pulse) Base Current - Continuous Collector .

MJD112 : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJD112 Features • Lead Free Finish/RoHS Compliant("P" Suffix designates RoHS Compliant. See ordering information) • Case Material:Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 • High DC Current Gain • Built-in a damper diode at E-C • Maximum Thermal Resistance: 125oC/W Junction to Ambient Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VCEO VCBO VEBO IC PC TJ Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Collector Dissipation Operating Jun.

MJD112 : ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“-I”suffix) ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICP IB PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Collector Power Dissipation Ta=25℃ Collector Power Dissipation TC=25℃ Junction Temperature Storage Temperatur.

MJD112 : MJD112 NPN Silicon Darlington Transistor MJD112 NPN Silicon Darlington Transistor Features • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) November 2006 tm Equivalent Circuit C B 1 D-PAK 1.Base 2.Collector 3.Emitter R1 R2 Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter R1 ≅ 10kΩ R2 ≅ 0.6kΩ E Value VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP Collector Current (Pulse) IB Base Current PC Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) TJ Junction Temperature TSTG Storage Temperature * These .

MJD112 : Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Total Power Dissipation Tc=25ºC Derate Above 25ºC Total Power Dissipation Ta=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VEBO IC IB PD PD Tj, Tstg VALUE 100 100 5 2 4 50 20 0.16 1.75 0.014 - 65 to +150 THERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air Rth (j-c) *Rth (j-a) 6.25 71.4 ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage **VCEO(sus) IC=30mA, IB=0 Collector Cut Off Current ICEO VCE=50V, IB=0 Collector .

MJD112 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD112 TRANSISTOR (NPN) yFEATURES Complementary Darlington Power Transistors Dpak for Surface Mount Applications TO-251-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 2A PC Collector Power Dissipation 1W RθJC Thermal resistance, junction to case 6.25 ℃/W RθJA Thermal resistance, junction to Ambient 71.4 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELE.

MJD112 : Epitaxial Planar NPN Transistor FEATURES  High DC Current Gain.  Built-in a Damper Diode at E-C. Pb Lead-free  Lead Formed for Surface Mount Applications.  Straight Lead.  MSL 3. Production specification MJD112 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current 2A ICP Collector Power Dissipation 4A IB Base Current 50 mA PC Collector Power Dissipation 1.5 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)025 Rev.A www.gmesemi.com 1 Production sp.

MJD112 : MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Electrically Similar to Popular TIP31 and TIP32 Series • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant* http://onsemi.com SILICON POWER TRANSIS.

MJD112 : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJD112 Features • Lead Free Finish/RoHS Compliant("P" Suffix designates RoHS Compliant. See ordering information) • Case Material:Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 • High DC Current Gain • Built-in a damper diode at E-C • Maximum Thermal Resistance: 125oC/W Junction to Ambient Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Collector Dissipation Operatin.

MJD112 : The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. . TAB 3 1 TO-252 (DPAK) Figure 1. Internal schematic diagram R1 typ. = 15 kΩ R2 typ. = 100 Ω Table 1. Device summary Order codes Marking MJD112T4 MJD117T4 MJD112 MJD117 January 2010 Polarity NPN PNP Doc ID 3540 Rev 3 Package DPAK DPAK Packaging Tape and reel Tape and reel 1/10 www.st.com 10 Absolute maximum ratings 1 Absolute maximum ratings Note: Table 2. Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM IB PTOT TSTG TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Colle.

MJD112 : SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC Collector Power Dissipation Ta=25 Tc=25 Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 100 5 2 4 50 1.3 20 150 -55 150 UNIT V V V A mA W C B Q A C H FF 123 1.

MJD112 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD112/D Complementary Darlington Power Transistors DPAK For Surface Mount Applications • • • • • • • Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Surface Mount Replacements for TIP110–TIP117 Series Monolithic Construction With Built–in Base–Emitter Shunt Resistors High DC Current Gain — hFE = 2500 (Typ) @ IC = 2.0 Adc Complementary .

MJD112L : SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC Collector Power Dissipation Ta=25 Tc=25 Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 100 5 2 4 50 1.3 20 150 -55 150 UNIT V V V A mA W C B Q A C K H F .

MJD112T4 : The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. . TAB 3 1 TO-252 (DPAK) Figure 1. Internal schematic diagram R1 typ. = 15 kΩ R2 typ. = 100 Ω Table 1. Device summary Order codes Marking MJD112T4 MJD112 MJD117T4 MJD117 January 2010 Polarity NPN PNP Doc ID 3540 Rev 3 Package DPAK DPAK Packaging Tape and reel Tape and reel 1/10 www.st.com 10 Absolute maximum ratings 1 Absolute maximum ratings Note: Table 2. Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM IB PTOT TSTG TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collec.

MJD117 : ·High DC current gain ·Built-in a damper diode at E-C ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“-I”suffix) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICP Collector Current-Pulse PC Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ TJ Junction Temperature .

MJD117 : Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Total Power Dissipation Tc=25ºC Derate Above 25ºC Total Power Dissipation Ta=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VEBO IC IB PD PD Tj, Tstg VALUE 100 100 5 2 4 50 20 0.16 1.75 0.014 - 65 to +150 THERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air Rth (j-c) *Rth (j-a) 6.25 71.4 ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage **VCEO(sus) IC=30mA, IB=0 Collector Cut Off Current ICEO VCE=50V, IB=0 Collector .




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