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KTC5103L Datasheet PDF


Part Number KTC5103L
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistors
Description ·High Collector Current-IC= 5A ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type KTA1385L APPLICATIONS ·Designed for power ampli...
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File Size 140.33KB
Datasheet KTC5103L PDF File








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KTC5103D : SEMICONDUCTOR TECHNICAL DATA LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES High Power Dissipation : PC=1.3W(Ta=25 ) Complementary to KTA1385D KTC5103D EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse * VCBO VCEO VEBO IC ICP Base Current IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg * PW 10ms, Duty Cycle 50% RATING 60 60 7 5 8 1 1.0 15 150 -55 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off C.

KTC5103L : SEMICONDUCTOR TECHNICAL DATA KTC5103D/L EPITAXIAL PLANAR NPN TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES High Power Dissipation : PC=1.3W(Ta=25 Complementary to KTA1385D/L ) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse * Base Current VCBO VCEO VEBO IC ICP IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg * PW 10ms, Duty Cycle 50% RATING 60 60 7 5 8 1 1.0 15 150 -55 150 UNIT V V V A A W Q A C H FF 123 1. BASE 2. COLLECTOR 3. EMITTER K E BD M I J P L O DIM A B C D E F H I J K L M O P Q MILLIM.




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