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KTD2058 Datasheet PDF


Part Number KTD2058
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistors
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Collector Power Dissipation : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : ...
Features ified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V ICBO Collector Cutoff Current VCB= 60V; IE=0 IEBO Emitter Cutoff Current VEB= 7...

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Datasheet KTD2058 PDF File








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KTD2058 : Elektronische Bauelemente KTD2058 3A, 60V P Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low collector saturation voltage: VCE(sat)=1V (Max.) TO-220J CLASSIFICATION OF hFE Product-Rank Y Range 100-200 REF. A B C D E F G H Millimeter Min. Max. 9.57 10.57 3.54 4.14 2.54 2.94 11.86 13.26 0.97 1.57 0.51 1.11 12.7 13.8 2.540 TYP. REF. I J K L M N Q Millimeter Min. Max. 4.68 5.48 2.95 3.96 4.27 4.87 1.07 1.47 8.0 10.0 2.03 2.92 0.30 0.65 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage Emitter to Base Voltage Collector Curren.

KTD2058 : SEMICONDUCTOR TECHNICAL DATA KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. Complementary to KTB1366. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VEBO IC IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg RATING 60 60 7 3 0.5 2 25 150 -55 150 UNIT V V V A A W K A S E LL M DD NN J GF B P C DIM MILLIMETERS A 10.0+_ 0.3 B 15.0+_ 0.3 C 2.70 +_ 0.3 D 0.76+0.09/-0.05 E Φ3.2 +_ 0.2 F 3.0+_ 0.3 G 12.0+_ 0.3 H 0.5+0.1/-.

KTD2059 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ (IC= 4A, IB= 0.4A) ·Complement to Type KTB1367 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.5 A 30 W 150 ℃ Tstg .

KTD2059 : SEMICONDUCTOR TECHNICAL DATA KTD2059 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES ᴌComplementary to KTB1367. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 100 5 5 0.5 30 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ O Q A U E K LL M DD NN T T 123 J GF B P C DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 2.70Ź0.30 S D 0.85 MAX E Ѹ3.20Ź0.20 F 3.00Ź0.30 G 12.30 MAX T RH 0.75 MAX J 13.60Ź0.50 K 3.90 MAX L 1.20 VM N 1.30 2.54 O 4.50Ź0.20.




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