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MJ16110 Datasheet PDF


Part Number MJ16110
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description · Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variatio...
Features ower Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=5A ;IB=0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 1....

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MJ16002 : ·Fast turn-off times ·Operating temperature range -65~200℃ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature -65~200 ℃ Tstg Storage .

MJ16002A : · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 500V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications. ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEV VCEO(SUS) VEBO IC ICM IB B MJ16002A PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation@TC=25℃ Junction Temperature Storage Te.

MJ16004 : ·Fast turn-off times ·Operating temperature range -65~200℃ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature -65~200 ℃ Tstg Storage .

MJ16006 : · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous .

MJ16008 : · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous .

MJ16010 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. It is particularly suited for line-operated switchmode applications such as: switching regulators,inverters,solenoids,relay drivers,motor controls and deflection circuits and etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector .

MJ16010 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ16010/D MJ16010 Designer's SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applications where drive current is limited. • • • • • • Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits • Fast Turn–Off Times — TC = 100°C 50 ns Inductive Fall Time (Typ) 90 ns Inductive Crossover Time (Typ) 800 ns Inductive S.

MJ16010 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ16010/D MJ16010 Designer's SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applications where drive current is limited. • • • • • • Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits • Fast Turn–Off Times — TC = 100°C 50 ns Inductive Fall Time (Typ) 90 ns Inductive Crossover Time (Typ) 800 ns Inductive S.

MJ16010 : ·With TO-3 package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Switching Regulators ·Inverters ·Solenoids ·Relay Drivers ·Motor Controls ·Deflection Circuits PINNING (see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION MJ16010 Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Ti Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total Power Dissipation Derate above 25 Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 850 450 6 15 20 10 15 175 1.0 200.

MJ16012 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. It is particularly suited for line-operated switchmode applications such as: switching regulators,inverters,solenoids,relay drivers,motor controls and deflection circuits and etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector .

MJ16012 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ16010/D MJ16010 Designer's SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applications where drive current is limited. • • • • • • Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits • Fast Turn–Off Times — TC = 100°C 50 ns Inductive Fall Time (Typ) 90 ns Inductive Crossover Time (Typ) 800 ns Inductive S.

MJ16012 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ16010/D MJ16010 Designer's SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applications where drive current is limited. • • • • • • Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits • Fast Turn–Off Times — TC = 100°C 50 ns Inductive Fall Time (Typ) 90 ns Inductive Crossover Time (Typ) 800 ns Inductive S.

MJ16012 : ·With TO-3 package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Switching Regulators ·Inverters ·Solenoids ·Relay Drivers ·Motor Controls ·Deflection Circuits PINNING (see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION MJ16012 Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Ti Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total Power Dissipation Derate above 25 Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 850 450 6 15 20 10 15 175 1.0 150.

MJ16014 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ16014 APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Con.

MJ16016 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 10 A IBM Base Current-Peak 20 A PC Collector Power Dissipation@TC=25℃ 250 W TJ Junction Temperature 200 ℃ Tstg Stora.

MJ16018 : ·Fast turn-off times ·Operating temperature range -65~200℃ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1500 V VCEO(SUS) Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 8 A IBM Base Current-Peak 12 A PC Collector Power Dissipation@TC=25℃ 175 W TJ Junction Temperature -65~200 ℃ Tstg Stora.

MJ16018 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ16018/D Designer's NPN Silicon Power Transistors 1.5 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. Typical Applications: Features: • • • • • • Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits • Collector–Emitter Voltage — VCEV = 1500 Vdc • Fast Turn–Off Times 80 ns Inductive Fall Time — 100_C (Typ) 110 ns Inductive Crossover Time — 100_C (Typ) 4.5 µs Inductive Storage Time — 100_C (Typ) • 100_C Performance Specifi.




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