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2SD2689 Datasheet PDF


Part Number 2SD2689
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·High speed. ·High breakdown voltage(VCBO=1500V). ·High reliability(Adoption of HVP process). ·Minimum Lot-to-Lot variations for robust device per...
Features ltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A VBE(sat) Base-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE=1500V ; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= ...

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Datasheet 2SD2689 PDF File








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2SD2686 : The UTC 2SD2686 is a silicon NPN epitaxial type transistors, including a zener diode between collector and base. it uses UTC’s advanced technology to provide customers high DC current gain. The UTC 2SD2686 is suitable for solenoid drive and motor drive applications.  FEATURES * High DC current gain * Zener diode included between collector and base  EQUIVALENT CIRCUIT Collector Base ≈5kΩ ≈300Ω Emitter  ORDERING INFORMATION Order Number 2SB2686G-x-AB3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 Pin Assignment 123 BCE Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R208-050.b 2SD2686 Preliminar.

2SD2686 : www.DataSheet4U.com www.DataSheet4U.com .

2SD2687S : 2SD2687S Transistors Low frequency amplifier, storobo 2SD2687S zApplication Low frequency amplifier Storobo zExternal dimensions (Unit : mm) 4.0 3.0 2.0 zFeatures 1) A collector current is large. 2) VCE(sat) ≤ 250mV At lc=1.5A / lB=30mA (15Min.) 3Min. 0.45 2.5 5.0 (1) (2) (3) 0.5 0.45 (1)Emitter(GND) (2)Collector(OUT) (3)Base(IN) Taping specifications zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits VCBO 15 VCEO 12 VEBO 6 IC 5 Collector current ICP 8 PC 400 Power siddipation Tj 150 Junction temperature Tstg Range of storage temperature −55 to +150 ∗ Single pulse, Pw=10ms Unit V V V A A∗ mW °C °C zE.

2SD2688LS : Ordering number : ENN7526 2SD2688LS NPN Triple Diffused Planar Silicon Transistor 2SD2688LS Color TV Horizontal Deflection Output Applications Features • • • • • Package Dimensions unit : mm 2079D [2SD2688LS] 10.0 3.2 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 0.7 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC .

2SD2689LS : Ordering number : ENN7527 2SD2689LS NPN Triple Diffused Planar Silicon Transistor 2SD2689LS Color TV Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2079D [2SD2689LS] 10.0 3.2 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 1 2 3 0.7 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=.




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