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2SB1184


Part Number 2SB1184
Manufacturer Inchange Semiconductor
Title Silicon PNP Power Transistor
Description ·Low VCE(sat) ·Small and slim package ·Complements the 2SD1760/2SD1864 ·100% tested ·Minimum Lot-to-Lot variations for robust device performance a...
Features llector-Base Breakdown Voltage IC= -50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50uA; IC= 0 ICBO Collector Cutoff Current VCB= -20V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -0.5A; ...

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2SB1180 : Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm For medium-speed voltage switching Complementary to 2SD1750, 2SD1750A ■ Features • High forward current transfer ratio hFE • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 12.6±0.3 7.2±0.3 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2.5±0.2 (1.0) (1.0) 1.1±0.1 1.0±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1180 2SB1180A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −60 −80 −60 −80 −7 −8 −12 15 1.3 150 −55 to +150 °C .

2SB1180A : Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm For medium-speed voltage switching Complementary to 2SD1750, 2SD1750A ■ Features • High forward current transfer ratio hFE • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 12.6±0.3 7.2±0.3 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2.5±0.2 (1.0) (1.0) 1.1±0.1 1.0±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1180 2SB1180A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −60 −80 −60 −80 −7 −8 −12 15 1.3 150 −55 to +150 °C .

2SB1181 : 2SB1260 / 2SB1181 PNP -1.0A -80V Middle Power Transistor Parameter VCEO IC Value -80V -1.0A lOutline MPT3 Base Collector Emitter lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD1733 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -500mA/ -50mA) 4) Lead Free/RoHS Compliant. 2SB1260 (SC-62) SOT-89 Datasheet CPT3 Collector Base Emitter 2SB1181 (SC-63) SOT-428 lInner circuit Collector Base Emitter lApplications Motor driver , LED driver Power supply lPackaging specifications Part No. Package 2SB1260 2SB1181 MPT3 CPT3 Package size (mm) 4540 6595 Taping code T100 TL Reel size (mm) Tape width (mm) Basic ordering unit (pcs) 180 12 1,000 .

2SB1181 : SMD Type Power Transistor 2SB1181 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Hight breakdown voltage and high current. Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse Collector power dissipation Collector power dissipation (Tc=25 ) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC PC Tj Tstg Rating -8.

2SB1182 : Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) 2SB1182 6.5±0.2 5.1+−00..21 C0.5 2.3+−00..21 0.5±0.1 2SB1240 6.8±0.2 2.5±0.2 4.4±0.2 1.0 0.9 5.5+−00..31 1.5±0.3 0.9 1.5 2.5 9.5±0.5 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1 1.0±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 0.65Max. 14.5±0.5 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 0.45±0.1 ROHM : ATV (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collect.

2SB1182 : TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.  / Features , 2SD1758 。 Low VCE(sat),complements the 2SD1758. / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 12 3 4 PIN1:Base PIN 2,4:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range P 82~180 Q 120~270 R 180~390 http://www.fsbrec.com 1/6 2SB1182 Rev.E May.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current - Continuous Collector Power Dissipation Collector Power Dissipation Juncti.

2SB1182 : ·Small and slim package ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 1.5 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1182 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specifie.

2SB1182 : SMD Type Medium Power Transistor 2SB1182 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). Epitaxial planar type 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse Collector power dissipation(Tc=25 ) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -40 -32 -5 -2 -3 10 150 -55 to +150 Unit V V V.

2SB1182 : 2SB1182 PNP PLASTIC ENCAPSULATE TRA NSISTORS P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits -40 -32 -5.0 -2.0 1.5 +150 -55 to +150 Unit V V V A W ˚C ˚C ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=-50µA Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -40 -32 -5.0 Typ Max -1.0 -1.0 Unit V V V µA µA Collector-Emitter Breakdown Voltage IC=-1.0mA Emitter-Base Breakdown Voltage IE=.

2SB1182 : The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.  FEATURES * High current output up to 3A * Low saturation voltage  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1182L-x-AB3-R 2SB1182G-x-AB3-R 2SB1182L-x-TN3-R 2SB1182G-x-TN3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 TO-252 Pin Assignment 1 2 3 B C E B C E Packing Tape Reel Tape Reel  MARKING SOT-89 2SB1182 Date Code L: Lead Free G: Halogen Free TO-252 www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 4 QW-R209-027.D 2SB1182 PNP SILICON TRANSISTOR  ABSOLUTE .

2SB1182-P : MCC Micro Commercial Components 2SB1182-P TM   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1182-Q 2SB1182-R PNP Silicon Epitaxial Transistors Features x x • • Low Collector Saturation Voltage Execllent current-to-gain characteristics Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating -32 -40 -5.0 -2.0 1.5 150 -55 to +150 Unit V V V A W к к K I C DPAK J H 1 O 2 3 M V 4 F .

2SB1182-Q : MCC Micro Commercial Components 2SB1182-P TM   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1182-Q 2SB1182-R PNP Silicon Epitaxial Transistors Features x x • • Low Collector Saturation Voltage Execllent current-to-gain characteristics Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating -32 -40 -5.0 -2.0 1.5 150 -55 to +150 Unit V V V A W к к K I C DPAK J H 1 O 2 3 M V 4 F .

2SB1182-R : MCC Micro Commercial Components 2SB1182-P TM   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1182-Q 2SB1182-R PNP Silicon Epitaxial Transistors Features x x • • Low Collector Saturation Voltage Execllent current-to-gain characteristics Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating -32 -40 -5.0 -2.0 1.5 150 -55 to +150 Unit V V V A W к к K I C DPAK J H 1 O 2 3 M V 4 F .

2SB1182D : 2SB1182D PNP Silicon Elektronische Bauelemente General Purpose Transistor TO-252 6. 50Ć0. 15 FEATURES The 2SB1182DX is designed for medium power amplifier application 9. 70Ć0. 20 0. 75Ć0. 10 5. 30Ć0. 10 2. 30Ć0. 10 0. 51Ć0. 05 C Low collector saturation voltage: VCE(sat)=-0.5V (Typ.) RoHS Compliant Product 5 0. 51Ć0. 10 1. 20 0Ć0. 10 5 0. 80Ć0. 10 5 1. 60Ć0. 15 2. 30Ć0. 10 0. 60Ć 0. 10 0 Ć9 0. 51 B O C E 2. 30Ć0. 10 * MAXIMUM RATINGS* TA=25 C unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current -Pulse,Pw=100mS Collector Dissipation Junction and Storage Temperature Symbol VCBO VCE.

2SB1182PT : CHENMKO ENTERPRISE CO.,LTD SMALL FLAT PNP Epitaxial Transistor VOLTAGE 32 Volts APPLICATION * Power driver and Dc to DC convertor . 2SB1182PT CURRENT 2 Ampere FEATURE * Small flat package. (DPAK) * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. .050 (1.27) .030 (0.77) DPAK .094 (2.38) .086 (2.19) .022 (0.55) .018 (0.45) CONSTRUCTION * PNP Switching Transistor .228(5..80) .217 (5.40) .394 (10.00) .354 (9.00) .028 (0.70) .019 (0.50) .035 (0.90) .181 (4.60) .268 (6.80) .252 (6.40) .024 (0.60) (1) (3) (2) .110 (2.80) .087 (2.20) .050 (1.27) .020 (0.51) CIRCUIT (1) B C (3) 1 Base 2 Emitter 3 Collector ( Heat Sink ) .023 (0.58) .018 (0.46) E (2) .020 (.

2SB1183 : 2SB1183 / 2SB1239 Transistors Power transistor (−40V, −2A) 2SB1183 / 2SB1239 !Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861. !External dimensions (Units : mm) 2SB1183 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 !Equivalent circuit 1.0 0.5 C 0.5 1.0 0.9 14.5 4.4 1.5 2.5 9.5 B RBE 4kΩ ROHM : CPT3 EIAJ : SC-63 E (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) C : Collector B : Base E : Emitter 2SB1239 6.8 2.5 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation .

2SB1184 : Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864. Dimensions (Unit : mm) 2SB1184 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 2SB1243 6.8±0.2 2.5±0.2 1.5±0.3 4.4±0.2 1.0 0.9 1.5 2.5 9.5±0.5 +0.3 −0.1 0.9 5.5 Structure Epitaxial planar type PNP silicon transistor 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1 1.0±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 0.65Max. 14.5±0.5 0.5±0.1 (1) (2) (3) 2.54 2.54 ROHM : ATV 1.05 0.45±0.1 (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Symbol Lim.




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