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IPG20N04S4-12A Datasheet PDF

Infineon
Part Number IPG20N04S4-12A
Manufacturer Infineon
Title Power-Transistor
Description IPG20N04S4-12A OptiMOS™-T2 Power-Transistor Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C pea...
Features
• Dual N-channel Normal Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI) Product Summary VDS RDS(on),max4) ID 40 V 12.2 mΩ 20 A PG-T...

File Size 191.03KB
Datasheet PDF File IPG20N04S4-12A PDF File


IPG20N04S4-12A IPG20N04S4-12A IPG20N04S4-12A




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IPG20N04S4-08 : IPG20N04S4-08 OptiMOS™-T2 Power-Transistor Product Summary V DS R DS(on),max4) ID 40 7.6 20 V mW A Features • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type IPG20N04S4-08 Package PG-TDSON-8-4 Marking 4N0408 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol Conditions T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation on.

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