Part Number CS1N70A3H-G
Manufacturer Huajing Microelectronics
Title Silicon N-Channel Power MOSFET
Description VDSS 700 V CS1N70 A3H-G, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25...
Features l Fast Switching l Low ON Resistance(Rdson≤16Ω) l Low Gate Charge (Typical Data:4.1nC) l Low Reverse transfer capacitances(Typical:2.2pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of electron ballast and adaptor. Absolute(Tc= 25℃ unless otherwise specified): Sy...

File Size 445.26KB
Datasheet CS1N70A3H-G PDF File

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