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3DD13003F6D


Part Number 3DD13003F6D
Manufacturer Huajing Microelectronics
Title Silicon NPN Transistor
Description ...
Features ...

File Size 153.05KB
Datasheet 3DD13003F6D PDF File








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3DD13003F6 : NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13003F6 MAIN CHARACTERISTICS IC 2.0A VCEO 400V PC(TO-126(S)) 20W Package z z z z z APPLICATIONS z Electronic ballasts z High frequency switching power supply z High frequency power transform z Commonly power amplifier circuit TO-126 TO-126S z z z z z(RoHS) FEATURES z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product ORDER MESSAGE Order codes 3DD13003F6-O-M-N-B 3DD13003F6-O-M-N-C 3DD13003F6-O-M-B-B 3DD13003F6-O-M-B-C Marking 13003F6 13003F6 13003F6 13003F6 Halogen Free NO NO NO NO Package TO-126 TO-126 TO-126S TO-126S Packaging Tube Bag Tu.

3DD13003F6 : .

3DD13003F6 : MJE13003F6(3DD13003F6) NPN /SILICON NPN TRANSISTOR :、、。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 600 V VCEO 400 V VEBO 9.0 V IC 0.5 A PC(Ta=25℃) 1.25 W PC(TC=25℃) 20 W Tj 150 ℃ Tstg -55~150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT tf tS IC=1mA IC=10mA IE=1mA VCB=600V VCE=400V VEB=9.0V VCE=5.0V IC=200mA IC=200mA VCE=10V IC=50mA VCE=5V (UI9600) IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 IC=200mA IB=40mA IB=40mA f=1.0MHz IC=100mA Min 600 400 9.0 10 5.0 Rating Typ M.




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