DatasheetsPDF.com

AUIRF6218S


Part Number AUIRF6218S
Manufacturer Infineon
Title Power MOSFET
Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achi...
Features
 Advanced Planar Technology
 Low On-Resistance
 P-Channel MOSFET
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *   Description Specifically designed for ...

File Size 332.37KB
Datasheet AUIRF6218S PDF File








Similar Ai Datasheet

AUIRF6218L : Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. VDSS HEXFET® Power MOSFET -150V RDS(on) max. 150m ID -27A DD S G D2Pak AUIRF6218S G Gate D Drain S GD TO-262 AUIRF6218L S Source Base part number AUIRF6218L AUIRF6218S Package Type TO-262.

AUIRF6218L : Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D2Pak AUIRF6218S D S S D G TO-262 AUIRF6218L G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional ope.

AUIRF6218S : Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D2Pak AUIRF6218S D S S D G TO-262 AUIRF6218L G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional ope.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)