TC5117400BST-70 Datasheet

TC5117400BST-70 DRAM

The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed addres.

Features

include single power supply of 5V± 10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. Features
• 4,194,304 word by 4 bit organization
• Fast access time and cycle time
• Single power supply of 5V± 10% with a built-in VBB generator
• L.