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TC514256Z-10

Toshiba
Part Number TC514256Z-10
Manufacturer Toshiba
Description DRAM
Published Jan 18, 2017
Detailed Description TOSHIBA MOS MEMORY PRODUCT 262,144 WORDS X 4 BIT DYNAMIC RAM SI LICON GATE CMOS DESCRIPTION TC514256P/J/Z-85, TC514256...
Datasheet PDF File TC514256Z-10 PDF File

TC514256Z-10
TC514256Z-10

Overview
TOSHIBA MOS MEMORY PRODUCT 262,144 WORDS X 4 BIT DYNAMIC RAM SI LICON GATE CMOS DESCRIPTION TC514256P/J/Z-85, TC514256P/J/Z-l0 TC514256P/J/Z-12 The TCs142s6P/J/Z is the new generation dynamic RAM organized 262,144 words by 4 bit.
The TCs142s6P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.
Multiplexed address inputs permit the TCs142s6P/J/Z to be packaged in a standard 20 pin plastic DIP and 26/20 pin plastic SOJ and 20/19 pin plastic ZIP.
The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
System oriented features include single power supply of 5V±10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.
FEATURES • 262,144 words by 4 bit organization • Fast access time and cycle time TC5l42s6P/J/Z-Bs-lO-12 tRAC R:AS Acces...


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