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2N7002DW

JCET

Dual N-channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs 2N7002DW V(BR)DSS 60 V Dual N-c...


JCET

2N7002DW

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Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs 2N7002DW V(BR)DSS 60 V Dual N-channel MOSFET RDS(on)MAX  5Ω@10V  7Ω@5V   FEATURE z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability ID 115mA SOT-363 6 5 4  1 2 3 APPLICATION z Load Switch for Portable Devices z DC/DC Converter MARKING Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VDS Drain-Source voltage 60 VGS ID Gate-Source voltage Drain Current ±20 115 PD Power Dissipation 150 RӨJA Thermal Resistance from Junction to Ambient 833 TJ Junction Temperature 150 Tstg Storage Temperature -55-150 Unit V V mA mW ℃/W ℃ ℃ www.cj-elec.com 1 I,Sep,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Test conditions Drain-source breakdown voltage Gate-threshold voltage * Gate-bod...




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