This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devi.
• 2.0A, 600V, RDS(on) = 5.00Ω @VGS = 10 V
• Low gate charge ( typical 9nC)
• High ruggedness
• Fast wsitching
• 100% avalanche tested
• Improved dv/dt capability
{D
GDS
TO-220
GD S
TO-220F
●
◀▲ {G
●
●
{S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single .
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