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BCX71K


Part Number BCX71K
Manufacturer CDIL
Title SILICON PLANAR EPITAXIAL TRANSISTORS
Description Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX71G BCX71H BCX71J BCX71K ...
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BCX71 : DESCRIPTION PNP transistor in a plastic SOT23 package. NPN complements: BCX70 series. MARKING TYPE NUMBER BCX71H BCX71J BCX71K MARKING CODE(1) BH* BJ* BK* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. handbook, halfpage 3 3 1 1 Top view 2 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BCX71H BCX71J BCX71K NAME − PACKAGE DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 2004 Feb 16 2 NXP Semiconductors PNP general purpose transistors Product data sheet BCX71 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM I.

BCX71 : The CENTRAL SEMICONDUCTOR BCX71 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODES: SEE MARKING CODE TABLE ON FOLLOWING PAGE SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IBM PD TJ, Tstg ΘJA 45 45 5.0 100 200 200 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) .

BCX71G : PNP Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW60, BCX70 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCW61..., BCX71... 32 1 Type BCW61A BCW61B BCW61C BCW61D BCX71G BCX71H BCX71J BCX71K Marking BAs BBs BCs BDs BGs BHs BJs BKs Pin Configuration 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 1 2011-07-29 BCW61..., BCX71... Maximum Ratings Parameter Symbol Value Collector-emitter voltage BCW61... BCX71...

BCX71G : BCX71G GENERAL PURPOSE TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature • Refer to KS5086 for graphs Symbol VCBO VCEO VEBO IC PC T STG Rating -45 -45 -5.0 -100 350 150 Unit V V V mA mW °C 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (TA=25° C) Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Noise .

BCX71G : PNP transistor in a plastic SOT23 package. NPN complements: BCX70 series. MARKING 1 2 handbook, halfpage BCX71 series PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 TYPE NUMBER BCX71G BCX71H Note MARKING CODE(1) BG∗ BH∗ TYPE NUMBER BCX71J BCX71K MARKING CODE(1) BJ∗ BK∗ Top view MAM256 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power .

BCX71G : The CENTRAL SEMICONDUCTOR BCX71 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODES: SEE MARKING CODE TABLE ON FOLLOWING PAGE SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IBM PD TJ, Tstg ΘJA 45 45 5.0 100 200 200 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) .

BCX71G : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCX71G = BG BCX71H = BH BCX71J = BJ BCX71K = BK PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.c.) Total power dissipation Junction temperature Transition frequency at f = 100 MHz –VCE = 5 V; –IC = 10 mA Noise figure at f = 1 kHz –VCE = 5V; –IC = 200mA RATINGS (at TA = 25°C unless otherwise specified).

BCX71G : SMD Type TransistIoCrs General Purpose Transistor BCX71G Features PNP Epitaxial Silicon Transistor +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Storage Temperature Symbol VCBO VCEO VEBO IC PC TSTG Rating -45 -45 -5 -100 350 150 Unit V V V mA mW 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.collector Electrical Characteristics Ta = 25 Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current D.

BCX71G : BCX71G,H,J,K MAXIMUM RATINGS CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous THERMAL CHARACTERISTICS Symbol vCEO VCBO v EBO 'C Characteristic •Total Device Dissipation, TA = 25°C Derate above 25°C Symbol PD Storage Temperature Tstg 'Thermal Resistance Junction to Ambient R 0JA . 'Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 2.0 mAdc, \q = 0) Emitter-Base Breakdown Voltage (|E = 1.0A*Adc, c| = o) C.

BCX71H : DESCRIPTION PNP transistor in a plastic SOT23 package. NPN complements: BCX70 series. MARKING TYPE NUMBER BCX71H BCX71J BCX71K MARKING CODE(1) BH* BJ* BK* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. handbook, halfpage 3 3 1 1 Top view 2 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BCX71H BCX71J BCX71K NAME − PACKAGE DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 2004 Feb 16 2 NXP Semiconductors PNP general purpose transistors Product data sheet BCX71 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM I.

BCX71H : PNP Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW60, BCX70 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCW61..., BCX71... 32 1 Type BCW61A BCW61B BCW61C BCW61D BCX71G BCX71H BCX71J BCX71K Marking BAs BBs BCs BDs BGs BHs BJs BKs Pin Configuration 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 1 2011-07-29 BCW61..., BCX71... Maximum Ratings Parameter Symbol Value Collector-emitter voltage BCW61... BCX71...

BCX71H : The CENTRAL SEMICONDUCTOR BCX71 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODES: SEE MARKING CODE TABLE ON FOLLOWING PAGE SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IBM PD TJ, Tstg ΘJA 45 45 5.0 100 200 200 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) .

BCX71H : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCX71G = BG BCX71H = BH BCX71J = BJ BCX71K = BK PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.c.) Total power dissipation Junction temperature Transition frequency at f = 100 MHz –VCE = 5 V; –IC = 10 mA Noise figure at f = 1 kHz –VCE = 5V; –IC = 200mA RATINGS (at TA = 25°C unless otherwise specified).

BCX71H : SMD Type TransistIoCrs PNP General Purpose Transistors BCX71H/J/K Features Low current (max. 100 mA). Low voltage (max. 45 V). Low noise. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current IC Peak collector current ICM Peak base current IBM Total power dissipation Ptot Storage temperature Tstg Junction temperature Tj Operating ambient temperature Ramb Thermal resistance from junction to ambient * Rth j-a * Transistor mounted on an FR4 printed-circuit board. Rating -45 -45 -5 -100 -20.

BCX71H : 1.3 2.4 0.2Min.for NoNteRwecDoesmigmnesnded PNP small signal transistor BCX71H Features 1) Ideal for switching and AF amplifier applications. 2) Complements the BCX70. Packaging specifications Type BCX70H Package Code Basic ordering unit (pieces) Taping T116 3000 Dimensions (Unit : mm) BCX71H (1)Emitter (2)Base (3)Collector 2.9 0.4 (3) 0.95 0.45 (2) (1) 0.95 0.95 1.9 0.15 Each lead has same dimensions Abbreviated symbol : GBH Absolute maximum ratings (Ta=25C) Parameter Symbol Collector-base voltage Collector-emitter voltage VCBO VCEO Emitter-base voltage Collector current VEBO IC Collector power dissipation PC Junction temperature Tj Storage temperature Tstg .

BCX71H : BCX71G,H,J,K MAXIMUM RATINGS CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous THERMAL CHARACTERISTICS Symbol vCEO VCBO v EBO 'C Characteristic •Total Device Dissipation, TA = 25°C Derate above 25°C Symbol PD Storage Temperature Tstg 'Thermal Resistance Junction to Ambient R 0JA . 'Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 2.0 mAdc, \q = 0) Emitter-Base Breakdown Voltage (|E = 1.0A*Adc, c| = o) C.

BCX71J : BCX71J GENERAL PURPOSE TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature • Refer to KS5086 for graphs Symbol VCBO VCEO VEBO IC PC T STG Rating -45 -45 -5 -100 350 150 Unit V V V mA mW °C 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (TA=25° C) Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Symbol BVCEO BVEBO ICES hFE Test Conditions IC= -2mA, IB=0 IE= -1µA, IC=0 VCE= -32V, VBE=0 VCE= -5V, IC= -10µA VCE= -5V, IC= -2mA VC.




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