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2N4398


Part Number 2N4398
Manufacturer ON Semiconductor
Title PNP Silicon High-Power Transistors
Description ON Semiconductort PNP Silicon High-Power Transistors designed for use in power amplifier and switching circuits. • Low Collector–Emitter ...
Features ...

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Datasheet 2N4398 PDF File








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2N4391 : 2N4391 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) JFET SWITCHING N CHANNEL- DEPLETION 5.33 (0.210) 4.32 (0.170) FEATURES • LOW ON RESISTANCE • FAST SWITCHING • MILITARY OPTIONS AVAILABLE 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 2 1 12.7 (0.500) min. APPLICATIONS: • SWITCHING APPLICATIONS TO–18 METAL PACKAGE Underside View PIN 1 – Source PIN 2 – Drain PIN 3 – Gate (Gate is connected to case) ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS VDG VGS IGF PD TJ TSTG Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Forward Gate Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operat.

2N4391 : N-Channel JFET Switch CORPORATION 2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate-Drain Voltage . -40V Gate Current 10mA Storage Temperature Range . -65oC to +200oC Operating Temperature Range . . -55oC to +200oC Lead Temperature (Soldering, 10sec) . +300oC TO-18 TO-92 SOT-23 Power Dissipation 1.8W 360mW 350mW Derate above 25oC 10mW/ oC 3.3mW/ oC 2.8mW/ oC Plastic Storage. -55oC to +15.

2N4391 : .

2N4391 : The 2N/PN/SST4391 series features many of the superior characteristics of JFETs which make it a good choice for demanding analog switching applications and for specialized amplifier c.

2N4391 : The CENTRAL SEMICONDUCTOR 2N4391 series types are N-Channel silicon JFETs designed for analog switching and chopper applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Gate-Drain Voltage Gate-Source Voltage Gate Current Power Dissipation (TC=25°C) Operating and Storage Junction Temperature SYMBOL VGD VGS IG PD TJ, Tstg 40 40 50 1.8 -65 to +175 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N4391 2N4392 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=20V - 0.1 - 0.1 IGSS VGS=20V, TA=125°C - 0.2 - 0.2 IDSS VDS=20V 50 150 25 75 ID(OFF) VDS=20V, VGS=12V - 0.1 - - ID(OFF) VDS=20V, VGS=7.0V - - - 0.1 ID(OFF) VDS=20V, VG.

2N4391 : The -40V InterFET 2N4391, 2N4392 and 2N4393 are targeted for switch, chopper and commutator designs. Gate leakages are typically less than 50pA at room temperatures. The 2N4393 has a cutoff voltage of less than 3.0V ideal for low-level power supplies. The TO-18 package is hermetically sealed and suitable for military applications. Gate/Case Drain 2 Source TO-18 Bottom View 3 1 Source 1 Drain 2 SOT23 Top View 3 Gate Gate 3 Drain 2 Source 1 TO-92 Bottom View Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage 2N4391 Min -40 50 -4 Ordering Information Custom Part and Binning Options Available .

2N4391 : 2N4391 Single N-Channel JFET switch Linear Systems replaces discontinued Siliconix 2N4391 FEATURES  DIRECT REPLACEMENT FOR SILICONIX 2N4391  LOW ON RESISTANCE  rDS(on) ≤ 30Ω  LOW GATE OPERATING CURRENT  ID(off) = 5pA  FAST SWITCHING  t(ON) ≤= 15ns  2N4391 Benefits: ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted)  ƒ Low Error Voltage Maximum Temperatures  ƒ High-Speed Analog Circuit Performance Storage Temperature  ‐65°C to +200°C  ƒ Negligible “Off-Error,” Excellent Accuracy ƒ Good Frequency Response, Low Glitches Operating Junction Temperature  ‐55°C to +200°C  ƒ Eliminates Additional Buffering Maximum Power Dissipation  Continuous Power Dissipation   1800mW  2N4391 Applications:.

2N4391 : The -40V 2N4391, 2N4392 and 2N4393 are targeted for switch, chopper and commutator designs. Gate leakages are typically less than 50pA at room temperatures. The 2N4393 has a cutoff voltage of less than 3.0V ideal for lowlevel power supplies. The TO-18 package is hermetically sealed and suitable for military applications. TX, TXV, and S-Level Screening Available - Consult Factory. Drain 2 4 Source 1 ORDERING GUIDE Part Number 2N4391, 2N4392, 2N4393 Description -40V N-Channel JFET Case Bottom View 0.195 (4.95) 0.178 (4.52) .33) .32) 0) min ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse Gate Source and Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation .

2N4392 : 2N4392 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) JFET SWITCHING N CHANNEL- DEPLETION 5.33 (0.210) 4.32 (0.170) FEATURES • LOW ON RESISTANCE • FAST SWITCHING • MILITARY OPTIONS AVAILABLE 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 2 1 12.7 (0.500) min. APPLICATIONS: • SWITCHING APPLICATIONS TO–18 METAL PACKAGE Underside View PIN 1 – Source PIN 2 – Drain PIN 3 – Gate (Gate is connected to case) ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS VDG VGS IGF PD TJ TSTG Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Forward Gate Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operat.

2N4392 : N-Channel JFET Switch CORPORATION 2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate-Drain Voltage . -40V Gate Current 10mA Storage Temperature Range . -65oC to +200oC Operating Temperature Range . . -55oC to +200oC Lead Temperature (Soldering, 10sec) . +300oC TO-18 TO-92 SOT-23 Power Dissipation 1.8W 360mW 350mW Derate above 25oC 10mW/ oC 3.3mW/ oC 2.8mW/ oC Plastic Storage. -55oC to +15.

2N4392 : .

2N4392 : The 2N/PN/SST4391 series features many of the superior characteristics of JFETs which make it a good choice for demanding analog switching applications and for specialized amplifier c.

2N4392 : The CENTRAL SEMICONDUCTOR 2N4391 series types are N-Channel silicon JFETs designed for analog switching and chopper applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Gate-Drain Voltage Gate-Source Voltage Gate Current Power Dissipation (TC=25°C) Operating and Storage Junction Temperature SYMBOL VGD VGS IG PD TJ, Tstg 40 40 50 1.8 -65 to +175 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N4391 2N4392 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=20V - 0.1 - 0.1 IGSS VGS=20V, TA=125°C - 0.2 - 0.2 IDSS VDS=20V 50 150 25 75 ID(OFF) VDS=20V, VGS=12V - 0.1 - - ID(OFF) VDS=20V, VGS=7.0V - - - 0.1 ID(OFF) VDS=20V, VG.

2N4392 : The -40V InterFET 2N4391, 2N4392 and 2N4393 are targeted for switch, chopper and commutator designs. Gate leakages are typically less than 50pA at room temperatures. The 2N4393 has a cutoff voltage of less than 3.0V ideal for low-level power supplies. The TO-18 package is hermetically sealed and suitable for military applications. Gate/Case Drain 2 Source TO-18 Bottom View 3 1 Source 1 Drain 2 SOT23 Top View 3 Gate Gate 3 Drain 2 Source 1 TO-92 Bottom View Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage 2N4391 Min -40 50 -4 Ordering Information Custom Part and Binning Options Available .

2N4392 : 2N4392 Single N-Channel JFET switch Linear Systems replaces discontinued Siliconix 2N4392 FEATURES  DIRECT REPLACEMENT FOR SILICONIX 2N4392  LOW ON RESISTANCE  rDS(on) ≤ 60Ω  LOW GATE OPERATING CURRENT  ID(off) = 5pA  FAST SWITCHING  t(ON) ≤= 15ns  2N4392 Benefits: ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted)  ƒ Low Error Voltage Maximum Temperatures  ƒ High-Speed Analog Circuit Performance Storage Temperature  ‐65°C to +200°C  ƒ Negligible “Off-Error,” Excellent Accuracy ƒ Good Frequency Response, Low Glitches Operating Junction Temperature  ‐55°C to +200°C  ƒ Eliminates Additional Buffering Maximum Power Dissipation  Continuous Power Dissipation   1800mW  2N4392 Applications:.

2N4392 : The -40V 2N4391, 2N4392 and 2N4393 are targeted for switch, chopper and commutator designs. Gate leakages are typically less than 50pA at room temperatures. The 2N4393 has a cutoff voltage of less than 3.0V ideal for lowlevel power supplies. The TO-18 package is hermetically sealed and suitable for military applications. TX, TXV, and S-Level Screening Available - Consult Factory. Drain 2 4 Source 1 ORDERING GUIDE Part Number 2N4391, 2N4392, 2N4393 Description -40V N-Channel JFET Case Bottom View 0.195 (4.95) 0.178 (4.52) .33) .32) 0) min ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse Gate Source and Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation .

2N4392-M : Technical Data TRANSISTOR maximum ratings VDS VDG VGS ID IDM IG Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) 40.0 V 40.0 V 40.0 V 0.1 A empty A 0.05 A 1.8 W 100.0 °C/W 200.0 °C NO. TYPE empty empty CASE empty empty 2N4392-M N-FET empty empty TO-18 MIL-S-19500 BURN-IN 48h/125°C PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted C NO. SYMBOL CONDITIONS MIN. MAX. UNITS 1. BVGSS IG = 1.0 µA 40.0 - V 2. BVDGO ID = 1.0 µA 40.0 - V 3. IGSS VGS = 20.0 V - 0.1 nA 4. VGS(OFF) VDS = 20.0 V, ID = 1.0 nA 2.0 5.0 V 5. ID(OFF) VDS = 20.0 V, VSG = 5.0 V - 0.2 nA 6. IDSS VDS = 20.0 V 25.0 75.0 .




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