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2N916


Part Number 2N916
Manufacturer Motorola
Title NPN silicon annular transistor
Description 2N916 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation (S Ta = 25°C Derate a...
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2N910 : 2N910 (SILICON) 2N911 NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications. CASE 22 (TO-18) Collector connected to cIse MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Emitter Voltage Collector-Base Voltage VCER VCB Emitter-Base Voltage Total Device DisSipation @ TA ;;: 25°C Derate above 2!5°C Total Device Dissipation @ TC ::;: 25°C TC ;: 10QoC Derate above 25°C Operating and Storage Junction Temperature Range VEB PD PD TJ' Tstg Value 60 eo 100 7.0 O. !5 2,86 1.8 0.975 10.3 -65 to +200 Unit Vdc Vdc Vdc Vdc Watt mW/PC Watt mW;oC °c 2-115 2N910, 2N911 (Continued) =ELECTRICAL CHARACTERISTICS (T. 2S'C u.

2N911 : 2N910 (SILICON) 2N911 NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications. CASE 22 (TO-18) Collector connected to cIse MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Emitter Voltage Collector-Base Voltage VCER VCB Emitter-Base Voltage Total Device DisSipation @ TA ;;: 25°C Derate above 2!5°C Total Device Dissipation @ TC ::;: 25°C TC ;: 10QoC Derate above 25°C Operating and Storage Junction Temperature Range VEB PD PD TJ' Tstg Value 60 eo 100 7.0 O. !5 2,86 1.8 0.975 10.3 -65 to +200 Unit Vdc Vdc Vdc Vdc Watt mW/PC Watt mW;oC °c 2-115 2N910, 2N911 (Continued) =ELECTRICAL CHARACTERISTICS (T. 2S'C u.

2N914 : OEM: Telefunken 2N914 Datasheet http://www.semicon-data.com/ OEM: Telefunken 2N914 Datasheet http://www.semicon-data.com/ OEM: Telefunken 2N914 Datasheet http://www.semicon-data.com/ OEM: Telefunken 2N914 Datasheet http://www.semicon-data.com/ .

2N914 : .

2N914 : .

2N915 : 2N915 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 50V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 50 0.1 Units V A Hz @ 5/10m (VCE / IC) 50 250M 200 0.36 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@sem.

2N915 : 2N915 CASE 22, STYLE 1 TO-18 (TO-206AA) GENERAL PURPOSE TRANSISTOR NPN SILICON Refer to 2N3946 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage @Total Device Dissipation TA = 25°C Derate above 25°C @Total Device Dissipation Tq = 25°C Derate above 25°C @Total Power Dissipation + 100°C Case Operating and Storage Temperature Temperature Range Symbol v CEO VCBO VEBO pd pd Pd Tj, Tstg Value 50 70 5.0 0.36 2.05 1.2 6.81 0.68 - 65 to + 200 Unit Vdc Vdc Vdc Watts mW/°C Watts mW/°C W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) dC = 10 mAlB = 0).

2N915 : OEM: Telefunken 2N915 Datasheet http://www.semicon-data.com/ OEM: Telefunken 2N915 Datasheet http://www.semicon-data.com/ .

2N916 : www.DataSheet.co.kr 2N916 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 25 0.1 Units V A Hz @ 5/10m (VCE / IC) 50 250M 200 0.36 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet ple.

2N916CSM : www.DataSheet.co.kr 2N916CSM Dimensions in mm (inches). 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.76 ± 0.15 (0.03 ± 0.006) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) A 1.40 (0.055) max. Bipolar NPN Device. VCEO = 25V IC = 0.1A 1.02 ± 0.10 (0.04 ± 0.004) PINOUTS 1 – Base 2 – Emitter 3 - Collector All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions.

2N916DCSM : www.DataSheet.co.kr 2N916DCSM Dimensions in mm (inches). 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.06 (0.025 ± 0.003) Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability Applications 4.32 ± 0.13 (0.170 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 2 1 A 3 4 5 Dual Bipolar NPN Devices. VCEO = 25V IC = 0.1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. 6 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 –.

2N918 : The 2N918 is a silicon planar epitaxial NPN transistors in Jedec TO-72 metal case. It is designed for low-noise VHF amplifiers, oscillators up to 1 GHz, non-neutralized IF amplifiers and non-saturating circuits with rise and fall times of less than 2.5 ns. TO-72 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC Pto t Tstg, Tj Parameter Collector-base Voltage (IE = 0) Collector-emitter Voltage (IB = 0) Emitter-base Voltage (IC = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C Storage and Junction Temperature January 1989 V al ue 30 15 3 50 200 300 – 65 to 200 Unit V V V mA mW mW °C 1/6 2N918 THERMAL DATA Rth j-cas e Thermal .

2N918 : Semicoa Corporation offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N918J) • JANTX level (2N918JX) • JANTXV level (2N918JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Applications • Ultra-high frequency transistor • Low power • NPN silicon transistor Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Operating Junction Temperature Storage Te.

2N918 : 2N918 JAN, JTX, JTXV AVAILABLE CASE 20-03, STYLE 10 (TO-72 (TO-206AF) AMPLIFIER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vCEO v CBO vEBO 'C PD Pd TJ. Tstg Value 15 30 3.0 50 200 1.14 300 1.71 -65 to + 200 Unit Vdc Vdc Vdc mAdc mW mW/°C mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage dC = 3.0 mAdc, Bl = 0) Collector-Base Brea.

2N918 : TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 DEVICES NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/301 2N918 2N918UB LEVELS JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C (1) Operating & Storage Junction Temperature Range VCEO VCBO VEBO IC PT Top & Tstg Note: 1) Derate linearly 1.14.

2N918 : OEM: Telefunken 2N918 Datasheet http://www.semicon-data.com/ OEM: Telefunken 2N918 Datasheet http://www.semicon-data.com/ .




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