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2N918 Datasheet PDF


Part Number 2N918
Manufacturer Advanced Semiconductor
Title NPN SILICON HIGH FREQUENCY TRANSISTOR
Description The 2N918 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 50 mA VCE PDISS TJ TSTG 15 V 300...
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Datasheet 2N918 PDF File








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2N910 : 2N910 (SILICON) 2N911 NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications. CASE 22 (TO-18) Collector connected to cIse MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Emitter Voltage Collector-Base Voltage VCER VCB Emitter-Base Voltage Total Device DisSipation @ TA ;;: 25°C Derate above 2!5°C Total Device Dissipation @ TC ::;: 25°C TC ;: 10QoC Derate above 25°C Operating and Storage Junction Temperature Range VEB PD PD TJ' Tstg Value 60 eo 100 7.0 O. !5 2,86 1.8 0.975 10.3 -65 to +200 Unit Vdc Vdc Vdc Vdc Watt mW/PC Watt mW;oC °c 2-115 2N910, 2N911 (Continued) =ELECTRICAL CHARACTERISTICS (T. 2S'C u.

2N911 : 2N910 (SILICON) 2N911 NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications. CASE 22 (TO-18) Collector connected to cIse MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Emitter Voltage Collector-Base Voltage VCER VCB Emitter-Base Voltage Total Device DisSipation @ TA ;;: 25°C Derate above 2!5°C Total Device Dissipation @ TC ::;: 25°C TC ;: 10QoC Derate above 25°C Operating and Storage Junction Temperature Range VEB PD PD TJ' Tstg Value 60 eo 100 7.0 O. !5 2,86 1.8 0.975 10.3 -65 to +200 Unit Vdc Vdc Vdc Vdc Watt mW/PC Watt mW;oC °c 2-115 2N910, 2N911 (Continued) =ELECTRICAL CHARACTERISTICS (T. 2S'C u.

2N914 : OEM: Telefunken 2N914 Datasheet http://www.semicon-data.com/ OEM: Telefunken 2N914 Datasheet http://www.semicon-data.com/ OEM: Telefunken 2N914 Datasheet http://www.semicon-data.com/ OEM: Telefunken 2N914 Datasheet http://www.semicon-data.com/ .

2N914 : .

2N914 : .

2N915 : 2N915 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 50V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 50 0.1 Units V A Hz @ 5/10m (VCE / IC) 50 250M 200 0.36 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@sem.

2N915 : 2N915 CASE 22, STYLE 1 TO-18 (TO-206AA) GENERAL PURPOSE TRANSISTOR NPN SILICON Refer to 2N3946 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage @Total Device Dissipation TA = 25°C Derate above 25°C @Total Device Dissipation Tq = 25°C Derate above 25°C @Total Power Dissipation + 100°C Case Operating and Storage Temperature Temperature Range Symbol v CEO VCBO VEBO pd pd Pd Tj, Tstg Value 50 70 5.0 0.36 2.05 1.2 6.81 0.68 - 65 to + 200 Unit Vdc Vdc Vdc Watts mW/°C Watts mW/°C W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) dC = 10 mAlB = 0).

2N915 : OEM: Telefunken 2N915 Datasheet http://www.semicon-data.com/ OEM: Telefunken 2N915 Datasheet http://www.semicon-data.com/ .

2N916 : www.DataSheet.co.kr 2N916 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 25 0.1 Units V A Hz @ 5/10m (VCE / IC) 50 250M 200 0.36 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet ple.

2N916 : 2N916 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation (S Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO Pd Pd TJ- Tstg Value 25 45 5 0.36 2.06 1.2 6.9 - 65 to + 200 Unit Vdc Vdc Vdc Watts mWVC Watts mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltaged) Oc = 30 mA, Ib = 0) Collector-Base Breakdown Voltage Oc = 10 mA, Ie = 0) Emitter-Base Breakdown Voltage (Ie = 10 fjA, lc = 0) Collector Cutoff Current (Vqb = 30 V, lg = 0) C.

2N916CSM : www.DataSheet.co.kr 2N916CSM Dimensions in mm (inches). 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.76 ± 0.15 (0.03 ± 0.006) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) A 1.40 (0.055) max. Bipolar NPN Device. VCEO = 25V IC = 0.1A 1.02 ± 0.10 (0.04 ± 0.004) PINOUTS 1 – Base 2 – Emitter 3 - Collector All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions.

2N916DCSM : www.DataSheet.co.kr 2N916DCSM Dimensions in mm (inches). 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.06 (0.025 ± 0.003) Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability Applications 4.32 ± 0.13 (0.170 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 2 1 A 3 4 5 Dual Bipolar NPN Devices. VCEO = 25V IC = 0.1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. 6 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 –.

2N918 : The 2N918 is a silicon planar epitaxial NPN transistors in Jedec TO-72 metal case. It is designed for low-noise VHF amplifiers, oscillators up to 1 GHz, non-neutralized IF amplifiers and non-saturating circuits with rise and fall times of less than 2.5 ns. TO-72 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC Pto t Tstg, Tj Parameter Collector-base Voltage (IE = 0) Collector-emitter Voltage (IB = 0) Emitter-base Voltage (IC = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C Storage and Junction Temperature January 1989 V al ue 30 15 3 50 200 300 – 65 to 200 Unit V V V mA mW mW °C 1/6 2N918 THERMAL DATA Rth j-cas e Thermal .

2N918 : Semicoa Corporation offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N918J) • JANTX level (2N918JX) • JANTXV level (2N918JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Applications • Ultra-high frequency transistor • Low power • NPN silicon transistor Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Operating Junction Temperature Storage Te.

2N918 : 2N918 JAN, JTX, JTXV AVAILABLE CASE 20-03, STYLE 10 (TO-72 (TO-206AF) AMPLIFIER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vCEO v CBO vEBO 'C PD Pd TJ. Tstg Value 15 30 3.0 50 200 1.14 300 1.71 -65 to + 200 Unit Vdc Vdc Vdc mAdc mW mW/°C mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage dC = 3.0 mAdc, Bl = 0) Collector-Base Brea.

2N918 : TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 DEVICES NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/301 2N918 2N918UB LEVELS JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C (1) Operating & Storage Junction Temperature Range VCEO VCBO VEBO IC PT Top & Tstg Note: 1) Derate linearly 1.14.

2N918 : OEM: Telefunken 2N918 Datasheet http://www.semicon-data.com/ OEM: Telefunken 2N918 Datasheet http://www.semicon-data.com/ .




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