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2N2221A Datasheet PDF


Part Number 2N2221A
Manufacturer TAITRON
Title Small Signal General Purpose Transistors
Description 2N2221A 2N2222A Marking Code 2N2221A 2N2222A VCEO Collector-Emitter Voltage 40 VCBO Collector-Base Voltage 75 VEBO Emitter-Base Volta...
Features
• Switching and Linear Application DC and VHF Amplifier Application
• RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-18, Metal can package Solderable per MIL-STD-202, Method 208 0.35 grams TO-18 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N2221A 2...

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2N2212 : 2N2212 (GERMANIUM) PNP GERMANIUM POWER TRANSISTORS · .. designed for high-current SllVitching applications requiring low saturation voltages. short SllVitching times and good collector-emitter sustaining capability. • Alloy-Diffused Epitaxial Construction • Low Saturation Voltage- VCE(SAT) = 0_5 Vdc (Max) @IC = 5.0 Adc 10 AMPERE PNP ADE GERMANIUM POWER TRANSISTORS 120 VOLTS 102 WATTS MAXIMUM RATINGS Rating "Collector-Emitter Voltage "Collector-Base Voltage "Emitter-Base Voltage "Collector Current - Continuous "Base Current - Continuous Total Device Dissipation@ TC = 25·C Derate above 25·C "Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic .Thermal Res.

2N2218 : The CENTRAL SEMICONDUCTOR 2N2218 and 2N2218A are silicon NPN transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg 2N2218 60 2N2218A 75 30 40 5.0 6.0 800 800 3.0 -65 to +200 ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=50V ICBO VCB=60V ICEV VCE=60V,.

2N2218 : SYMBOL 2N2218, 19 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @Ta=25ºC Derate Above 25ºC VCEO VCBO VEBO IC PD 30 60 5 800 800 4.57 Power Dissipation @ Tc=25ºC PD 3 Derate Above 25ºC 17.1 Operating and Storage Junction Tj, Tstg -65 to +200 Temperature Range UNIT V V V mA mW mW/ºC W mW/ºC ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector .

2N2218 : 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET RADIATION HARDENED NPN-SWITCHIN SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL LEVELS JANSM – 3K Rads (Si) JANSD – 10K Rads (Si) JANSP – 30K Rads (Si) JANSL – 50K Rads (Si) JANSR – 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N2218 2N2218A; L 2N2219 2N2219A; L Collector-Emitter Voltage VCEO 30 50 Collector-Base Voltage VCBO 60 75 Emitter-Base Voltage VEBO 5.0 6.0 Collector Current Total Power Dissipat.

2N2218 : 2N2218I A, 2N2219I A 2N2221 I A{sILiCON) 2N2222,A, 2N5581 , 2N5582 NPN SILICON ANNULAR HERMETIC TRANSISTORS widely used "Industry Standard" transistors for applications as medium-speed switches and as amplifiers from audio to VHF frequencies. • DC Current Gain Specified - 1.0 to 500 mAdc • Low Collector-Emitter Saturation Voltage - VCE(sat) @ IC = 500 mAdc = 1.6 Vdc (Max) - Non-A Suffix = 1.0 Vdc (Max) - A-Suffix • High Current-Gain-Bandwidth Product - fT = 250 MHz (Min) @ IC = 20 mAdc - All Types Except = 300 MHz (Min) @ IC = 20 mAdc - 2N2219A, 2N2222A, 2N5582 • Complements to PNP 2N2904,A thru 2N2907,A • JAN/JANTX Available for all devices NPN SILICON SWITCHING AND AMPLIFIER TRANSI.

2N2218 : 2N2218, A, AL & 2N2219, A, AL NPN Switching Silicon Transistor Features  Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/251  TO-5 & TO-39 (TO-205AD) Package Rev. V1 Electrical Characteristics Parameter Test Conditions Part # Units Min. Max. Off Characteristics: Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Base Cutoff Current On Characteristics1: IE = 10 mA VEB = 5 V VEB = 6 V VEB = 4 V VCE = 30 V VCE = 50 V VCB = 50 V VCB = 60 V VCB = 60 V VCB = 75 V IC = 0.1 mA, VCE = 10 V 2N2218; 2N2219 2N2218A/AL; 2N2219A/AL Vdc 2N2218; 2N2219 µAdc 2N2218A/AL; 2N2219A/AL nAdc All types 2N2218; 2N2219 2N221.

2N2218 : The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218/2N2219 approved to CECC 50002100, 2N2221/2N2222 approved to CECC 50002-101 available on request. TO-39 TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I.

2N2218 : 2N2218 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 30V 5.08 (0.200) typ. IC = 0.8A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 30 0.8 Units V A Hz @ 10/0..

2N2218 : NPN 2N2218 – 2N2218A 2N2219 – 2N2219A SWITCHING SILICON TRANSISTORS The 2N2218-A and 2N2219-A are NPN transistors mounted in TO-39 metal case . They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2218 2N2219 30 60 5 800 2N2218 A 2N2219 A 40 75 6 Unit VCEO VCBO VEBO IC PD Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Tamb = 25° Total Power Dissipation Tcase= 25° V V V mA W 0.8 3 175 -65 to +200 °C °C TJ TStg Junction Temperature Sto.

2N2218A : A Silicon NPN transistor in a TO-39 case intended for high speed switching applications. Absolute Maximum Ratings: Collector-Base Voltage, Vcbo Collector-Emitter Voltage, Vceo Emitter-Base Voltage, Vebo Continuous Collector Current, Ic Total Device Dissipation (Tc = +25ºC), PD Derate above 25ºC Total Device Dissipation (Ta = + 25ºC), Pd Derate above 25ºC Operating Junction Temperature Range, Tj Storage Temperature Range, Tstg : 75V : 40V : 6V : 800mA : 1.2W : 6.85mW/ºC : 400mW : 2.28mW/ºC : -65ºC to +200 ºC : -65ºC to 200ºC Electrical Characteristics: (Ta = +25ºC Unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakd.

2N2218A : 2N2218I A, 2N2219I A 2N2221 I A{sILiCON) 2N2222,A, 2N5581 , 2N5582 NPN SILICON ANNULAR HERMETIC TRANSISTORS widely used "Industry Standard" transistors for applications as medium-speed switches and as amplifiers from audio to VHF frequencies. • DC Current Gain Specified - 1.0 to 500 mAdc • Low Collector-Emitter Saturation Voltage - VCE(sat) @ IC = 500 mAdc = 1.6 Vdc (Max) - Non-A Suffix = 1.0 Vdc (Max) - A-Suffix • High Current-Gain-Bandwidth Product - fT = 250 MHz (Min) @ IC = 20 mAdc - All Types Except = 300 MHz (Min) @ IC = 20 mAdc - 2N2219A, 2N2222A, 2N5582 • Complements to PNP 2N2904,A thru 2N2907,A • JAN/JANTX Available for all devices NPN SILICON SWITCHING AND AMPLIFIER TRANSI.

2N2218A : SYMBOL 2N2218A,19A Collector -Emitter Voltage VCEO 40 Collector -Base Voltage VCBO 75 Emitter -Base Voltage VEBO 6.0 Collector Current Continuous IC 800 Power Dissipation @Ta=25 degC PD 800 Derate Above 25deg C 4.57 @ Tc=25 degC PD 3.0 Derate Above 25deg C 17.1 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter-Base Voltage Collector-Cut off Current SYMBOL TEST CONDITION VCEO VCBO VEBO ICBO IC=10mA,IB=0 IC=10uA.IE=0 IE=10uA, IC=0 VCB=60V, IE=0 VALUE MIN MAX 40 75 6.0 - - 10 Emitter-Cut off Current Base.

2N2218A : 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET RADIATION HARDENED NPN-SWITCHIN SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL LEVELS JANSM – 3K Rads (Si) JANSD – 10K Rads (Si) JANSP – 30K Rads (Si) JANSL – 50K Rads (Si) JANSR – 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N2218 2N2218A; L 2N2219 2N2219A; L Collector-Emitter Voltage VCEO 30 50 Collector-Base Voltage VCBO 60 75 Emitter-Base Voltage VEBO 5.0 6.0 Collector Current Total Power Dissipat.

2N2218A : 2N2218A Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1 – Emitter TO39 (TO205AD) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. VCEO = 40V IC = 0.8A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 10/0.15 (VCE / IC) * Maximum Working Voltage .

2N2218A : SYMBOL 2N2218A,19A Collector -Emitter Voltage VCEO 40 Collector -Base Voltage VCBO 75 Emitter -Base Voltage VEBO 6.0 Collector Current Continuous IC 800 Power Dissipation @Ta=25 degC PD 800 Derate Above 25deg C 4.57 @ Tc=25 degC PD 3.0 Derate Above 25deg C 17.1 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter-Base Voltage Collector-Cut off Current SYMBOL TEST CONDITION VCEO VCBO VEBO ICBO IC=10mA,IB=0 IC=10uA.IE=0 IE=10uA, IC=0 VCB=60V, IE=0 VALUE MIN MAX 40 75 6.0 - - 10 Emitter-Cut off Current Base.

2N2218A : NPN 2N2218 – 2N2218A 2N2219 – 2N2219A SWITCHING SILICON TRANSISTORS The 2N2218-A and 2N2219-A are NPN transistors mounted in TO-39 metal case . They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2218 2N2219 30 60 5 800 2N2218 A 2N2219 A 40 75 6 Unit VCEO VCBO VEBO IC PD Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Tamb = 25° Total Power Dissipation Tcase= 25° V V V mA W 0.8 3 175 -65 to +200 °C °C TJ TStg Junction Temperature Sto.




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