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2N2369A Datasheet PDF


Part Number 2N2369A
Manufacturer Motorola
Title Switching Transistors
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2369/D Switching Transistors NPN Silicon COLLECTOR 3 2 BASE 2N2369 2N2369A* *Mo...
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2N2369 : 2N2369 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1 – Emitter TO18 (TO206AA) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device. VCEO = 40V IC = 0.2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 1/10m (VCE / IC) * Maximum Working Voltage Min. 40 Typ. 400M Max. 40 0.2 120 0.36 Units V A Hz W This is a shortform datasheet. For a full datasheet please contact sales@seme.

2N2369 : Collector -Emitter Voltage Collector -Emitter Voltage SYMBOL VCEO VCES VALUE 15 40 Collector -Base Voltage VCBO 40 Emitter -Base Voltage Collector Current Continuous Collector Current Peak(10us pulse) VEBO IC IC(peak) 4.5 200 500 Power Dissipation@ Ta=25 degC PD 360 Derate Above 25 deg C @Tc=25 deg C @Tc=100 deg C PD PD 2.06 1.2 0.68 Derate Above100 deg C 6.85 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2N2369 Collector -Emitter Voltage Collector -Emitter Voltage Collector -Base Voltage VCEO*(sus)IC=10mA, IB=0 VC.

2N2369 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2369/D Switching Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N2369 2N2369A* *Motorola Preferred Device 3 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector– Base Voltage Emitter– Base Voltage Collector Current (10 ms pulse) Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 100°C Derate above 100°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC(Peak) IC PD PD TJ, Tstg Value 15 40 40 4.5 500 200 0.36 2.06 0.68 6.85 – 65 to +200 Unit Vdc Vdc Vdc Vdc mA mA Watt mW/°C Watts mW/°C .

2N2369 : 3 2 DESCRIPTION NPN switching transistor in a TO-18 metal package. 3 2 MAM264 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = 10 mA; VCE = 1 V; Tj = 25 °C IC = 10 mA; VCE = 10 V; f = 100 MHz ICon = 10 mA; IBon = 3 mA; IBoff = −1.5 mA open emitter open base CONDITIONS − − − − 40 500 − MIN. MAX. 40 15 200 360 120 − 30 MHz ns V V mA mW UNIT 1997 Jun 20 2 Philips Semiconductors Product specification NPN switching transistor LIMITING VALUES In accordance wit.

2N2369 : The 2N2369 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO I CM Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Peak Current (t = 10 µs) Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C Storage and Junction Temperature Value 40 40 15 4.5 0.5 0.36 1.2 0.68 – 65 to 200 Unit V V V V A W W W °C T s t g, T j Products ap.

2N2369 : 2N2369, 2369A High Speed Switching Transistors Features: • NPN Silicon Planar Epitaxial Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power and High Speed Switching Applications. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27 G - 2.97 H 0.91 1.17 J 0.71 1.21 K 12.70 - L 45° Dimensions : Millimetres Pin Configuration 1. Emitter 2. Base 3. Collector Page 1 31/05/05 V1.0 2N2369, 2369A High Speed Switching Transistors Absolute Maximum Ratings Parameter Collector Emitt.

2N2369 : 2N2369 2N2369A VCEO Collector-Emitter Voltage 15 VCES VCBO Collector-Emitter Voltage Collector-Base Voltage 40 40 VEBO IC Emitter-Base Voltage Collector Current Continuous 4.5 200 IC(peak) Collector Current Peak (10us pulse) Power Dissipation at TA=25°C 500 360 Power Dissipation Derate above TA=25°C 2.06 PD Power Dissipation at TC=25°C 1.2 Power Dissipation at TC=100°C 0.68 Power Dissipation Derate above TC=100°C 6.85 TJ, TSTG Operating Junction and Storage Temperature Range -65 to +200 Unit V V V V mA mA mW mW/° C W W mW/° C °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6.

2N2369A : Collector -Emitter Voltage Collector -Emitter Voltage SYMBOL VCEO VCES VALUE 15 40 Collector -Base Voltage VCBO 40 Emitter -Base Voltage Collector Current Continuous Collector Current Peak(10us pulse) VEBO IC IC(peak) 4.5 200 500 Power Dissipation@ Ta=25 degC PD 360 Derate Above 25 deg C @Tc=25 deg C @Tc=100 deg C PD PD 2.06 1.2 0.68 Derate Above100 deg C 6.85 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2N2369 Collector -Emitter Voltage Collector -Emitter Voltage Collector -Base Voltage VCEO*(sus)IC=10mA, IB=0 VC.

2N2369A : The CENTRAL SEMICONDUCTOR 2N2369A is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCES VCEO VEBO IC ICM PD PD TJ, Tstg ΘJA ΘJC 40 40 15 4.5 200 500 360 1.2 -65 to +200 486 146 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=20V .

2N2369A : The 2N2369A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CB O V CE S V CE O V EB O IC I CM Pt ot Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Current (10 µs pulse) Total Power Dissipation at T amb ≤ 25 °C at T c ase ≤ 25 °C at T c ase ≤ 100 °C Storage and Junction Temperature Value 40 40 15 4.5 0.2 0.5 0.36 1.2 0.68 – 65 to 200 Unit V V V V A A W W W °C .

2N2369A : TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices 2N2369A 2N2369AU 2N2369AUA 2N2369AUB Qualified Level 2N4449 2N4449U 2N4449UA 2N4449UB JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Symbol VCEO VEBO VCBO VCES All UB 20 6.0 All others 15 4.5 Unit Vdc Vdc Vdc Vdc W W 40 40 @ TA = +250C @ TC = +250C Total Power Dissipation 2N2369A; 2N4449 0.50(1) 1.2(2) (5) All UA 0.50 1.2(2) PT (6) All UB 0.40 1.4(7) (3) All U 0.60 1.5(4) Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 TO-18* (TO-206AA) 2N2369A 0 C THERMAL CHARACTERISTICS Characteristics Th.

2N2369A : NPN switching transistor in a TO-18 metal package. PINNING PIN 1 2 3 DESCRIPTION emitter base collector, connected to case handbook, halfpa1ge 2 3 2 MAM264 3 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER VCBO VCEO IC Ptot hFE collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain fT transition frequency toff turn-off time CONDITIONS open emitter open base Tamb ≤ 25 °C IC = 10 mA; VCE = 350 mV IC = 10 mA; VCE = 1 V IC = 10 mA; VCE = 10 V; f = 100 MHz ICon = 10 mA; IBon = 3 mA; IBoff = −1.5 mA MIN. − − − − 40 − 500 − MAX. 40 15 200 360 − 120 − 30 UNIT V V mA mW MHz ns 1998 Mar 03 2.

2N2369A : 2N2369, 2369A High Speed Switching Transistors Features: • NPN Silicon Planar Epitaxial Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power and High Speed Switching Applications. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27 G - 2.97 H 0.91 1.17 J 0.71 1.21 K 12.70 - L 45° Dimensions : Millimetres Pin Configuration 1. Emitter 2. Base 3. Collector Page 1 31/05/05 V1.0 2N2369, 2369A High Speed Switching Transistors Absolute Maximum Ratings Parameter Collector Emitt.

2N2369A : 2N2369 2N2369A VCEO Collector-Emitter Voltage 15 VCES VCBO Collector-Emitter Voltage Collector-Base Voltage 40 40 VEBO IC Emitter-Base Voltage Collector Current Continuous 4.5 200 IC(peak) Collector Current Peak (10us pulse) Power Dissipation at TA=25°C 500 360 Power Dissipation Derate above TA=25°C 2.06 PD Power Dissipation at TC=25°C 1.2 Power Dissipation at TC=100°C 0.68 Power Dissipation Derate above TC=100°C 6.85 TJ, TSTG Operating Junction and Storage Temperature Range -65 to +200 Unit V V V V mA mA mW mW/° C W W mW/° C °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6.

2N2369A1 : 2N2369A MECHANICAL DATA Dimensions in mm (inches) 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) ) ) 0 0 1 7 2 1 . . 0 0 ( ( 3 2 3 3 . . 5 4 0 .4 8 (0 .0 1 9 ) 0 .4 1 (0 .0 1 6 ) d ia . 1 2 .7 (0 .5 0 0 ) m in . ) 0 0 FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HERMETIC TO18 PACKAGE • CECC SCREENING OPTIONS 5 . . n 0 i ( m 7 . 2 1 2 .5 4 (0 .1 0 0 ) N o m . !  TO-18 (TO-206AA) Underside View PAD 1 – Base PAD 2 – Emitter PAD 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 2.

2N2369ACSM : LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N2369ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.31 rad. (0.012) 0.51 ± 0.10 (0.02 ± 0.004) 2.54 ± 0.13 (0.10 ± 0.005) 3 • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • CECC SCREENING OPTIONS A 1.40 (0.055) max. 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.31 rad. (0.012) 0.76 ± 0.15 (0.03 ± 0.006) 1.02 ± 0.10 (0.04 ± 0.004) APPLICATIONS: Hermetically sealed surface mount version of the popular 2N2369A for high reliability / space applications.




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