DatasheetsPDF.com

MCR25N Datasheet PDF


Part Number MCR25N
Manufacturer Motorola
Title Silicon Controlled Rectifiers
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half–wave ac control applic...
Features ...

File Size 431.57KB
Datasheet MCR25N PDF File








Similar Ai Datasheet

MCR25 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR25/D Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed. • Blocking Voltage to 800 Volts • On-State Current Rating of 25 Amperes RMS • High Surge Current Capability — 300 Amperes • Industry Standard TO–220AB Package for Ease of Design • Glass Passivated Junctions for Reliability and Uniformity *Motorola preferred devices MCR25 SERIES* SCRs 25 AMPERES RMS 400 thru 800 VOLTS A K A G CASE 221A–06 (TO-220AB) Style 3 MAXIMUM RATINGS .

MCR25 : MCR 0 0 4 QL P J 100 Part No. MCR (Micro chip resistors) Size (mm [inch]) 004(0402 [01005]) 006(0603 [0201]) 01(1005 [0402]) 03(1608 [0603]).

MCR25D : Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. Symbol Simplified outline ak g 1 2 3 TO-220 Pin Description 1 Cathode 2 Anode 3 Gate Applications: Motor control Industrial and domestic lighting Heating Static switching Features Blocking voltage to 800 V On-state RMS current to 25 A SYMBOL PARAMETER VDRM Repetitive peak off-state voltages MCR25D MCR25M MCR25N IT RMS ITSM RMS on-state current full sine wave Non-repetitive peak on-state current (ful.

MCR25D : DIGITRON SEMICONDUCTORS MCR25D, MCR25M, MCR25N SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Peak repetitive off-state voltage(1) (TJ = -40 to +125°C, sine wave, 50 to 60Hz) MCR25D MCR25M MCR25N Symbol VDRM VRRM Value 400 600 800 Unit V On-state RMS current (180° conduction angles, TC = 80°C) IT(RMS) 25 A Peak non-repetitive surge current (half-cycle, sine wave, 60Hz, TJ = 125°C) Circuit fusing consideration (t = 8.3ms) ITSM I2t 300 373 A A2s Forward peak gate power (pulse width ≤ 1.0µs, TC.

MCR25D : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed. • Blocking Voltage to 800 Volts • On-State Current Rating of 25 Amperes RMS • High Surge Current Capability — 300 Amperes • Industry Standard TO–220AB Package for Ease of Design • Glass Passivated Junctions for Reliability and Uniformity Order this document by MCR25/D MCR25 SERIES* *Motorola preferred devices SCRs 25 AMPERES RMS 400 thru 800 VOLTS A K A G CASE 221A–06 (TO-220AB) Style 3 MAXIMUM RATINGS (TJ = 25.

MCR25D : MCR25D, MCR25M, MCR25N Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed. • Blocking Voltage to 800 Volts • On-State Current Rating of 25 Amperes RMS • High Surge Current Capability — 300 Amperes • Rugged, Economical TO–220AB Package • Glass Passivated Junctions for Reliability and Uniformity • Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design • High Immunity to dv/dt — 100 V/µsec Minimum @ 125°C • Device Marking: Logo, Device Type, e.g., MCR25D, Date Code .

MCR25DG : Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed. Pin Out Features • Blocking Voltage to 800 Volts • On−State Current Rating of 25 Amperes RMS • High Surge Current Capability − 300 Amperes • Rugged Economical TO−220AB Package • Glass Passivated Junctions for Reliability and Uniformity • Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design • High Immunity to dv/dt − 100 V/sec Minimum at 125°C • These are Pb−Free Devices CASE 221A STYLE 4 12 Functional Diagram A Additional Information G K Datasheet Resources Samples © 2.

MCR25M : Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. Symbol Simplified outline ak g 1 2 3 TO-220 Pin Description 1 Cathode 2 Anode 3 Gate Applications: Motor control Industrial and domestic lighting Heating Static switching Features Blocking voltage to 800 V On-state RMS current to 25 A SYMBOL PARAMETER VDRM Repetitive peak off-state voltages MCR25D MCR25M MCR25N IT RMS ITSM RMS on-state current full sine wave Non-repetitive peak on-state current (ful.

MCR25M : DIGITRON SEMICONDUCTORS MCR25D, MCR25M, MCR25N SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Peak repetitive off-state voltage(1) (TJ = -40 to +125°C, sine wave, 50 to 60Hz) MCR25D MCR25M MCR25N Symbol VDRM VRRM Value 400 600 800 Unit V On-state RMS current (180° conduction angles, TC = 80°C) IT(RMS) 25 A Peak non-repetitive surge current (half-cycle, sine wave, 60Hz, TJ = 125°C) Circuit fusing consideration (t = 8.3ms) ITSM I2t 300 373 A A2s Forward peak gate power (pulse width ≤ 1.0µs, TC.

MCR25M : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed. • Blocking Voltage to 800 Volts • On-State Current Rating of 25 Amperes RMS • High Surge Current Capability — 300 Amperes • Industry Standard TO–220AB Package for Ease of Design • Glass Passivated Junctions for Reliability and Uniformity Order this document by MCR25/D MCR25 SERIES* *Motorola preferred devices SCRs 25 AMPERES RMS 400 thru 800 VOLTS A K A G CASE 221A–06 (TO-220AB) Style 3 MAXIMUM RATINGS (TJ = 25.

MCR25M : MCR25D, MCR25M, MCR25N Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed. • Blocking Voltage to 800 Volts • On-State Current Rating of 25 Amperes RMS • High Surge Current Capability — 300 Amperes • Rugged, Economical TO–220AB Package • Glass Passivated Junctions for Reliability and Uniformity • Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design • High Immunity to dv/dt — 100 V/µsec Minimum @ 125°C • Device Marking: Logo, Device Type, e.g., MCR25D, Date Code .

MCR25MG : Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed. Pin Out Features • Blocking Voltage to 800 Volts • On−State Current Rating of 25 Amperes RMS • High Surge Current Capability − 300 Amperes • Rugged Economical TO−220AB Package • Glass Passivated Junctions for Reliability and Uniformity • Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design • High Immunity to dv/dt − 100 V/sec Minimum at 125°C • These are Pb−Free Devices CASE 221A STYLE 4 12 Functional Diagram A Additional Information G K Datasheet Resources Samples © 2.

MCR25N : Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. Symbol Simplified outline ak g 1 2 3 TO-220 Pin Description 1 Cathode 2 Anode 3 Gate Applications: Motor control Industrial and domestic lighting Heating Static switching Features Blocking voltage to 800 V On-state RMS current to 25 A SYMBOL PARAMETER VDRM Repetitive peak off-state voltages MCR25D MCR25M MCR25N IT RMS ITSM RMS on-state current full sine wave Non-repetitive peak on-state current (ful.

MCR25N : DIGITRON SEMICONDUCTORS MCR25D, MCR25M, MCR25N SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Peak repetitive off-state voltage(1) (TJ = -40 to +125°C, sine wave, 50 to 60Hz) MCR25D MCR25M MCR25N Symbol VDRM VRRM Value 400 600 800 Unit V On-state RMS current (180° conduction angles, TC = 80°C) IT(RMS) 25 A Peak non-repetitive surge current (half-cycle, sine wave, 60Hz, TJ = 125°C) Circuit fusing consideration (t = 8.3ms) ITSM I2t 300 373 A A2s Forward peak gate power (pulse width ≤ 1.0µs, TC.

MCR25N : MCR25D, MCR25M, MCR25N Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed. • Blocking Voltage to 800 Volts • On-State Current Rating of 25 Amperes RMS • High Surge Current Capability — 300 Amperes • Rugged, Economical TO–220AB Package • Glass Passivated Junctions for Reliability and Uniformity • Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design • High Immunity to dv/dt — 100 V/µsec Minimum @ 125°C • Device Marking: Logo, Device Type, e.g., MCR25D, Date Code .

MCR25NG : Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed. Pin Out Features • Blocking Voltage to 800 Volts • On−State Current Rating of 25 Amperes RMS • High Surge Current Capability − 300 Amperes • Rugged Economical TO−220AB Package • Glass Passivated Junctions for Reliability and Uniformity • Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design • High Immunity to dv/dt − 100 V/sec Minimum at 125°C • These are Pb−Free Devices CASE 221A STYLE 4 12 Functional Diagram A Additional Information G K Datasheet Resources Samples © 2.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)