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2N5085 Datasheet PDF

SSDI
Part Number 2N5085
Manufacturer SSDI
Title NPN Transistor
Description 10 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) 2N3018 2N5049 2N2811 2N2812 2N3920 2N5083 2N5084 2N5622 2N5877 2N6387 2N2813 2N2814 2N...
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Datasheet PDF File 2N5085 PDF File


2N5085 2N5085 2N5085




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2N50-CB : The UTC 2N50-CB is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 2N50-CB is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.  FEATURES * RDS(ON) 5.0Ω @ VGS=10V, ID=1.0A * High switching speed * 100% avalanche tested  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free - 2N.

2N50-SE : The UTC 2N50-SE is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits. 1  FEATURES * RDS(ON) ≤ 8.0 Ω @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET SOP-8 TO-92  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2N50L-S08-R 2N50G-S08-R SOP-8 2N50L-T92-B 2N50G-T92-B TO-.

2N5002 : Data Sheet No. 2N5002 Type 2N5002 Geometry 9202 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case. Also available in chip form using the 9202 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/534 which Semicoa meets in all cases. Generic Part Number: 2N5002 REF: MIL-PRF-19500/534 TO-59 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Collector Current, Pulsed 8.3 ms pulse-width, 1% duty cycle Power Disipation at 25 C ambient Derate above 25oC Reverse .

2N5002 : TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current www.DataSheet4U.com Symbol VCEO VCBO VEBO IC IC(3) PT TJ, Tstg Symbol RθJC 0 Value 80 100 5.5 5.0 10 2.0 58 -65 to +200 Max. 3.0 88 Units Vdc Vdc Vdc Adc W 0 Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1) Derate linearly 11.4 mW/ C for TA 25 C 2) Derate linearly 331 mW/.

2N5002 : .

2N5003 : Data Sheet No. 2N5003 Type 2N5003 Geometry 9702 Polarity PNP Qual Level: JAN - JANTXV Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case. Also available in chip form using the 9702 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/512 which Semicoa meets in all cases. Generic Part Number: 2N5003 REF: MIL-PRF-19500/512 TO-59 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Collector Current, PW 8.3 ms, 1% duty cycle Power Disipation TA = 25oC ambient Derate above 25oC Power Disipation TC = .

2N5003 : .

2N5003 : This high speed transistor is rated at 5 amps and is military qualified up to a JANTXV level. This TO-59 isolated package is available with a 180 degree lead orientation. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N5003 and 2N5005. • Internal metallurgical bond option available. • JAN, JANTX, and JANTXV, qualification per MIL-PRF-19500/535 available. • RoHS compliant versions available (commercial grade only). Qualified Levels: JAN, JANTX, and JANTXV Marking may vary. TO-59 (TO-210AA) Isolated Package APPLICATION.

2N5004 : Data Sheet No. 2N5004 Type 2N5004 Geometry 9202 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case. Also available in chip form using the 9202 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/534 which Semicoa meets in all cases. Generic Part Number: 2N5004 REF: MIL-PRF-19500/534 TO-59 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Collector Current, PW 8.3 ms, 1% duty cycle Power Disipation TA = 25oC ambient Derate above 25oC Reverse Pulse Energy O.

2N5004 : TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current www.DataSheet4U.com Symbol VCEO VCBO VEBO IC IC(3) PT TJ, Tstg Symbol RθJC 0 Value 80 100 5.5 5.0 10 2.0 58 -65 to +200 Max. 3.0 88 Units Vdc Vdc Vdc Adc W 0 Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1) Derate linearly 11.4 mW/ C for TA 25 C 2) Derate linearly 331 mW/.

2N5004 : .

2N5005 : Data Sheet No. 2N5005 Type 2N5005 Geometry 9702 Polarity PNP Qual Level: JAN - JANTXV Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case. Also available in chip form using the 9702 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/512 which Semicoa meets in all cases. Generic Part Number: 2N5005 REF: MIL-PRF-19500/512 TO-59 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Collector Current, PW 8.3 ms, 1% duty cycle Reverse Pulse Energy Power Disipation TA = 25 C ambient Derate above 25oC Pow.

2N5005 : This high speed transistor is rated at 5 amps and is military qualified up to a JANTXV level. This TO-59 isolated package is available with a 180 degree lead orientation. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N5003 and 2N5005. • Internal metallurgical bond option available. • JAN, JANTX, and JANTXV, qualification per MIL-PRF-19500/535 available. • RoHS compliant versions available (commercial grade only). Qualified Levels: JAN, JANTX, and JANTXV Marking may vary. TO-59 (TO-210AA) Isolated Package APPLICATION.

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