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2N6183


Part Number 2N6183
Manufacturer SSDI
Title PNP Transistor
Description 10 AMP NPN (continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) mhFiEn mhaFEx @Ic (A) 2N6562 2N6581 2N6590 10 450 10 40 ...
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2N6182 : 10 AMP NPN (continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) mhFiEn mhaFEx @Ic (A) 2N6562 2N6581 2N6590 10 450 10 40 5 10 450 7 35 Note 1 10 450 7 35 Note 1 10 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) 2N4907 2N4908 2N5621 2N5737 2N5739 2N5875 2N6667 2N4909 2N5007 2N5009 2N5312 2N5316 2N5386 2N5623 2N5625 2N5853 2N5876 2N6127 2N6182 2N6183 2N6186 2N6187 2N6668 2N7369 SFT5151 SFT5153 SFT6650/3 2N5290 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 mVCaExO (V) mhFiEn mhaFEx @Ic (A) 40 20 80 Note 1 60 20 80 Note 1 60 70 200 5 60 20 80 5 60 20 80 5 60 20 100 Note 1 60 1000 2000 Note 1 80 20 80 Not.

2N6184 : 10 AMP PNP(continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N5291 10 100 70 200 5 0.9 5 40 116 TO-61/I 2N5314 10 100 30 90 10 1.5 10 30 50* TO-61/I 2N5318 10 100 30 90 5 0.6 5 30 50* TO-61/I 2N5627 10 100 30 90 5 0.9 5 30 116 TO-3 2N5677 10 100 30 90 5 0.6 5 20 50* TO-61 2N5738 10 100 20 80 5 0.5 5 10 50* TO-3 2N5740 10 100 20 80 5 0.5 5 10 20* TO-66 2N6184 10 100 30 120 Note 1 0.7 Note 1 Note 1 60 TO-59 2N6185 10 100 60 240 Note 1 0.7 Note 1 Note 1 60 T.

2N6185 : 10 AMP PNP(continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N5291 10 100 70 200 5 0.9 5 40 116 TO-61/I 2N5314 10 100 30 90 10 1.5 10 30 50* TO-61/I 2N5318 10 100 30 90 5 0.6 5 30 50* TO-61/I 2N5627 10 100 30 90 5 0.9 5 30 116 TO-3 2N5677 10 100 30 90 5 0.6 5 20 50* TO-61 2N5738 10 100 20 80 5 0.5 5 10 50* TO-3 2N5740 10 100 20 80 5 0.5 5 10 20* TO-66 2N6184 10 100 30 120 Note 1 0.7 Note 1 Note 1 60 TO-59 2N6185 10 100 60 240 Note 1 0.7 Note 1 Note 1 60 T.

2N6186 : 2N6186 thru 2N6189 (SILICON) MEDIUM-POWER PNP SILICON TRANSISTORS . designed for switching and wide-band amplifier applications. • Low Collector-Emitter Saturation Voltage VCE(satl = 1.2 Vdc (Maxi @ IC = 10 Adc • DC Current Gain Specified to 5 Amperes • Excellent Safe Operating Area • Packaged in the Compact, High Dissipation TO-59 Case • Isolated Collector Configuration • 2N6186 thru 2N6189 Complement to NPN 2N5346 thru 2N5349 10 AMPERE POWER TRANSISTORS PNP SILICON 80-100 VOLTS 60 WATTS "MAXIMUM RATINGS Rating Collector-Emttter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base Current Total Device Dissipation@Tc-2SC Derate above 25°C Operating and.

2N6186 : 10 AMP NPN (continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) mhFiEn mhaFEx @Ic (A) 2N6562 2N6581 2N6590 10 450 10 40 5 10 450 7 35 Note 1 10 450 7 35 Note 1 10 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) 2N4907 2N4908 2N5621 2N5737 2N5739 2N5875 2N6667 2N4909 2N5007 2N5009 2N5312 2N5316 2N5386 2N5623 2N5625 2N5853 2N5876 2N6127 2N6182 2N6183 2N6186 2N6187 2N6668 2N7369 SFT5151 SFT5153 SFT6650/3 2N5290 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 mVCaExO (V) mhFiEn mhaFEx @Ic (A) 40 20 80 Note 1 60 20 80 Note 1 60 70 200 5 60 20 80 5 60 20 80 5 60 20 100 Note 1 60 1000 2000 Note 1 80 20 80 Not.

2N6187 : 2N6186 thru 2N6189 (SILICON) MEDIUM-POWER PNP SILICON TRANSISTORS . designed for switching and wide-band amplifier applications. • Low Collector-Emitter Saturation Voltage VCE(satl = 1.2 Vdc (Maxi @ IC = 10 Adc • DC Current Gain Specified to 5 Amperes • Excellent Safe Operating Area • Packaged in the Compact, High Dissipation TO-59 Case • Isolated Collector Configuration • 2N6186 thru 2N6189 Complement to NPN 2N5346 thru 2N5349 10 AMPERE POWER TRANSISTORS PNP SILICON 80-100 VOLTS 60 WATTS "MAXIMUM RATINGS Rating Collector-Emttter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base Current Total Device Dissipation@Tc-2SC Derate above 25°C Operating and.

2N6187 : 10 AMP NPN (continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) mhFiEn mhaFEx @Ic (A) 2N6562 2N6581 2N6590 10 450 10 40 5 10 450 7 35 Note 1 10 450 7 35 Note 1 10 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) 2N4907 2N4908 2N5621 2N5737 2N5739 2N5875 2N6667 2N4909 2N5007 2N5009 2N5312 2N5316 2N5386 2N5623 2N5625 2N5853 2N5876 2N6127 2N6182 2N6183 2N6186 2N6187 2N6668 2N7369 SFT5151 SFT5153 SFT6650/3 2N5290 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 mVCaExO (V) mhFiEn mhaFEx @Ic (A) 40 20 80 Note 1 60 20 80 Note 1 60 70 200 5 60 20 80 5 60 20 80 5 60 20 100 Note 1 60 1000 2000 Note 1 80 20 80 Not.

2N6188 : 2N6186 thru 2N6189 (SILICON) MEDIUM-POWER PNP SILICON TRANSISTORS . designed for switching and wide-band amplifier applications. • Low Collector-Emitter Saturation Voltage VCE(satl = 1.2 Vdc (Maxi @ IC = 10 Adc • DC Current Gain Specified to 5 Amperes • Excellent Safe Operating Area • Packaged in the Compact, High Dissipation TO-59 Case • Isolated Collector Configuration • 2N6186 thru 2N6189 Complement to NPN 2N5346 thru 2N5349 10 AMPERE POWER TRANSISTORS PNP SILICON 80-100 VOLTS 60 WATTS "MAXIMUM RATINGS Rating Collector-Emttter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base Current Total Device Dissipation@Tc-2SC Derate above 25°C Operating and.

2N6188 : 10 AMP PNP(continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N5291 10 100 70 200 5 0.9 5 40 116 TO-61/I 2N5314 10 100 30 90 10 1.5 10 30 50* TO-61/I 2N5318 10 100 30 90 5 0.6 5 30 50* TO-61/I 2N5627 10 100 30 90 5 0.9 5 30 116 TO-3 2N5677 10 100 30 90 5 0.6 5 20 50* TO-61 2N5738 10 100 20 80 5 0.5 5 10 50* TO-3 2N5740 10 100 20 80 5 0.5 5 10 20* TO-66 2N6184 10 100 30 120 Note 1 0.7 Note 1 Note 1 60 TO-59 2N6185 10 100 60 240 Note 1 0.7 Note 1 Note 1 60 T.

2N6189 : 2N6186 thru 2N6189 (SILICON) MEDIUM-POWER PNP SILICON TRANSISTORS . designed for switching and wide-band amplifier applications. • Low Collector-Emitter Saturation Voltage VCE(satl = 1.2 Vdc (Maxi @ IC = 10 Adc • DC Current Gain Specified to 5 Amperes • Excellent Safe Operating Area • Packaged in the Compact, High Dissipation TO-59 Case • Isolated Collector Configuration • 2N6186 thru 2N6189 Complement to NPN 2N5346 thru 2N5349 10 AMPERE POWER TRANSISTORS PNP SILICON 80-100 VOLTS 60 WATTS "MAXIMUM RATINGS Rating Collector-Emttter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base Current Total Device Dissipation@Tc-2SC Derate above 25°C Operating and.

2N6189 : 10 AMP PNP(continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N5291 10 100 70 200 5 0.9 5 40 116 TO-61/I 2N5314 10 100 30 90 10 1.5 10 30 50* TO-61/I 2N5318 10 100 30 90 5 0.6 5 30 50* TO-61/I 2N5627 10 100 30 90 5 0.9 5 30 116 TO-3 2N5677 10 100 30 90 5 0.6 5 20 50* TO-61 2N5738 10 100 20 80 5 0.5 5 10 50* TO-3 2N5740 10 100 20 80 5 0.5 5 10 20* TO-66 2N6184 10 100 30 120 Note 1 0.7 Note 1 Note 1 60 TO-59 2N6185 10 100 60 240 Note 1 0.7 Note 1 Note 1 60 T.




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