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2N5960 Datasheet PDF

SSDI
Part Number 2N5960
Manufacturer SSDI
Title PNP Transistor
Description 20 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn...
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File Size 26.66KB
Datasheet PDF File 2N5960 PDF File


2N5960 2N5960 2N5960




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2N5900 : 2N5887 thru 2N590 1 (GERMANIUM) GERMANIUM PNP POWER TRANSISTORS · .. designed for low frequency switching and amplifier applications requiring to 7.0 amperes collector current. • Low Coliector·Emitter Cutoff Current ICEX = 10 mA Max @ 1000 C with VCE to 75 V • Low Coliector·Emitter Saturation Voltage VCE(sat) = 0.4 V Max @ IC = 7.0 A • Broad Range of Current Gain Available • TO·66 Cold Weld All Aluminum Package • Electrically Similar to 2N3611 Series 7.0 AMPERE POWER TRANSISTORS PNP GERMANIUM 20-75 VOLTS 57 WATTS 'MAXIMUM RATINGS Rating Collector-Emitter Voltage (Base Open) Collector-EmItter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Base Current Con.

2N5901 : 2N5887 thru 2N590 1 (GERMANIUM) GERMANIUM PNP POWER TRANSISTORS · .. designed for low frequency switching and amplifier applications requiring to 7.0 amperes collector current. • Low Coliector·Emitter Cutoff Current ICEX = 10 mA Max @ 1000 C with VCE to 75 V • Low Coliector·Emitter Saturation Voltage VCE(sat) = 0.4 V Max @ IC = 7.0 A • Broad Range of Current Gain Available • TO·66 Cold Weld All Aluminum Package • Electrically Similar to 2N3611 Series 7.0 AMPERE POWER TRANSISTORS PNP GERMANIUM 20-75 VOLTS 57 WATTS 'MAXIMUM RATINGS Rating Collector-Emitter Voltage (Base Open) Collector-EmItter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Base Current Con.

2N5902 : .

2N5902 : matched dual n-channel JFETs designed for • • • • Differential Amplifiers • High Input Impedance Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-to-Gate Voltage ±80V Gate-Drain or Gate-Source Voltage ... -40 V Gate Current .. 10 mA Device Dissipation (Each Side), T A =25°C (Derate 3 mWrC) 367mW Total Device Dissipation, T A =25°C (Derate 4 mWrC) 500mW Storage Temperature Range ...•....-65 to +200°C H Siliconix Performance Curves NT See Section 4 BENEFITS • Matching Characteristics Specified • High Input Impedance IG = 1 pA Max (2N5906-9) TO·78 See Section 6 ~~0, 62 s, .

2N5903 : .

2N5903 : matched dual n-channel JFETs designed for • • • • Differential Amplifiers • High Input Impedance Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-to-Gate Voltage ±80V Gate-Drain or Gate-Source Voltage ... -40 V Gate Current .. 10 mA Device Dissipation (Each Side), T A =25°C (Derate 3 mWrC) 367mW Total Device Dissipation, T A =25°C (Derate 4 mWrC) 500mW Storage Temperature Range ...•....-65 to +200°C H Siliconix Performance Curves NT See Section 4 BENEFITS • Matching Characteristics Specified • High Input Impedance IG = 1 pA Max (2N5906-9) TO·78 See Section 6 ~~0, 62 s, .

2N5904 : .

2N5904 : matched dual n-channel JFETs designed for • • • • Differential Amplifiers • High Input Impedance Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-to-Gate Voltage ±80V Gate-Drain or Gate-Source Voltage ... -40 V Gate Current .. 10 mA Device Dissipation (Each Side), T A =25°C (Derate 3 mWrC) 367mW Total Device Dissipation, T A =25°C (Derate 4 mWrC) 500mW Storage Temperature Range ...•....-65 to +200°C H Siliconix Performance Curves NT See Section 4 BENEFITS • Matching Characteristics Specified • High Input Impedance IG = 1 pA Max (2N5906-9) TO·78 See Section 6 ~~0, 62 s, .

2N5905 : .

2N5905 : 2N5905 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The 2N5905 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications where tight tracking is required. The hermetically sealed TO-78 package is well suited for hi-reliability and harsh environment applications. (See Packaging Information). FEATURES  LOW DRIFT  ULTRA LOW LEAKAGE  LOW PINCHOFF  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  | VGS1‐2 / T| = 5µV/°C TYP.  IG = 150fA TYP.  Vp = 2V TYP.  2N5905 Benefits: ƒ ƒ ƒ ƒ Tight Tracking Good matching Ultra Low Leakage Low Drift Maxi.

2N5905 : matched dual n-channel JFETs designed for • • • • Differential Amplifiers • High Input Impedance Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-to-Gate Voltage ±80V Gate-Drain or Gate-Source Voltage ... -40 V Gate Current .. 10 mA Device Dissipation (Each Side), T A =25°C (Derate 3 mWrC) 367mW Total Device Dissipation, T A =25°C (Derate 4 mWrC) 500mW Storage Temperature Range ...•....-65 to +200°C H Siliconix Performance Curves NT See Section 4 BENEFITS • Matching Characteristics Specified • High Input Impedance IG = 1 pA Max (2N5906-9) TO·78 See Section 6 ~~0, 62 s, .

2N5906 : .

2N5906 : matched dual n-channel JFETs designed for • • • • Differential Amplifiers • High Input Impedance Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-to-Gate Voltage ±80V Gate-Drain or Gate-Source Voltage ... -40 V Gate Current .. 10 mA Device Dissipation (Each Side), T A =25°C (Derate 3 mWrC) 367mW Total Device Dissipation, T A =25°C (Derate 4 mWrC) 500mW Storage Temperature Range ...•....-65 to +200°C H Siliconix Performance Curves NT See Section 4 BENEFITS • Matching Characteristics Specified • High Input Impedance IG = 1 pA Max (2N5906-9) TO·78 See Section 6 ~~0, 62 s, .

2N5906 : 2N5906 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The 2N5906 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications where tight tracking is required. The hermetically sealed TO-78 package is well suited for hi-reliability and harsh environment applications. (See Packaging Information). FEATURES  LOW DRIFT  ULTRA LOW LEAKAGE  LOW PINCHOFF  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  | VGS1‐2 / T| = 5µV/°C TYP.  IG = 150fA TYP.  Vp = 2V TYP.  2N5906 Benefits: ƒ ƒ ƒ ƒ Tight Tracking Good matching Ultra Low Leakage Low Drift Maxi.

2N5907 : .

2N5907 : 2N5907 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The 2N5907 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications where tight tracking is required. The hermetically sealed TO-78 package is well suited for hi-reliability and harsh environment applications. (See Packaging Information). FEATURES  LOW DRIFT  ULTRA LOW LEAKAGE  LOW PINCHOFF  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  | VGS1‐2 / T| = 5µV/°C TYP.  IG = 150fA TYP.  Vp = 2V TYP.  2N5907 Benefits: ƒ ƒ ƒ ƒ Tight Tracking Good matching Ultra Low Leakage Low Drift Maxi.

2N5907 : matched dual n-channel JFETs designed for • • • • Differential Amplifiers • High Input Impedance Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-to-Gate Voltage ±80V Gate-Drain or Gate-Source Voltage ... -40 V Gate Current .. 10 mA Device Dissipation (Each Side), T A =25°C (Derate 3 mWrC) 367mW Total Device Dissipation, T A =25°C (Derate 4 mWrC) 500mW Storage Temperature Range ...•....-65 to +200°C H Siliconix Performance Curves NT See Section 4 BENEFITS • Matching Characteristics Specified • High Input Impedance IG = 1 pA Max (2N5906-9) TO·78 See Section 6 ~~0, 62 s, .




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