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BSS84


Part Number BSS84
Manufacturer WEITRON
Title Small Signal MOSFET
Description BSS84 Small Signal MOSFET P-Channel 3 DRAIN Features: *Low On-Resistance : 10 *Low Input Capacitance: 30PF *Low Out put Capacitance : 10PF *Low...
Features *Low On-Resistance : 10 *Low Input Capacitance: 30PF *Low Out put Capacitance : 10PF *Low Threshole : 2.0V *Fast Switching Speed : 2.5ns 1 GATE Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. 2 SOURCE SOT-23 1 2 3...

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BSS80 : PNP Silicon Switching Transistors BSS 80 BSS 82 High DC current gain q Low collector-emitter saturation voltage q Complementary types: BSS 79, BSS 81 (NPN) q Type BSS 80 B BSS 80 C BSS 82 B BSS 82 C Marking CHs CJs CLs CMs Ordering Code (tape and reel) Q62702-S557 Q62702-S492 Q62702-S560 Q62702-S482 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Symbol VCE0 VCB0 VE.

BSS80 : BSS80, BSS82 PNP Silicon Switching Transistors  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS79, BSS81 (NPN) 3 2 1 VPS05161 Type BSS80B BSS80C BSS82B BSS82C Marking CHs CJs CLs CMs 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg BSS80 40 60 5 800 1 100 200 330 150 BSS82 60 Unit .

BSS80 : SMD Type TransistIoCrs PNP Silicon Switching Transistors BSS80,BSS82 Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 77 Junction temperature Storage temperature Junction - soldering point Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS BSS80 BSS82 40 60 60 5 800 1 100 200 330 150 -65 to +150 220 Unit V V V mA A mA mA mW K/W 0-0.1 +0.10.38 -0.1 +.

BSS806N : OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 BSS806N Product Summary V DS R DS(on),max ID V GS=2.5 V V GS=1.8 V 20 V 57 mΩ 82 2.3 A PG-SOT23 3 1 2 Type BSS806N Package SOT23 Tape and Reel Information H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Marking YEs Avalanche energy, single pulse E AS I D=2.3 A, R GS=25 Ω Reverse diode dv /dt Gate .

BSS806NE : OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • ESD protected • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 BSS806NE Product Summary VDS RDS(on),max ID VGS=2.5 V VGS=1.8 V 20 V 57 mW 82 2.3 A PG-SOT23 3 1 2 Type BSS806NE Package SOT23 Tape and Reel H6327: 3000 pcs/ reel Marking YIs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Halogen Free Yes Packing Non dry Value 2.3 1.9 9.3 Unit A Avalanche energy, sin.

BSS80B : PNP Silicon Switching Transistors BSS 80 BSS 82 High DC current gain q Low collector-emitter saturation voltage q Complementary types: BSS 79, BSS 81 (NPN) q Type BSS 80 B BSS 80 C BSS 82 B BSS 82 C Marking CHs CJs CLs CMs Ordering Code (tape and reel) Q62702-S557 Q62702-S492 Q62702-S560 Q62702-S482 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Symbol VCE0 VCB0 VE.

BSS80B : BSS80, BSS82 PNP Silicon Switching Transistors  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS79, BSS81 (NPN) 3 2 1 VPS05161 Type BSS80B BSS80C BSS82B BSS82C Marking CHs CJs CLs CMs 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg BSS80 40 60 5 800 1 100 200 330 150 BSS82 60 Unit .

BSS80B : www.DataSheet4U.com SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 95 PARTMARKING DETAIL — 7 BSS80B - CH BSS80C - CJ BSS80B BSS80C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM PTOT tj:tstg VALUE -60 -40 -5 -800 330 -55 to +150 SOT23 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) BSS80B BSS80C hFE fT Cobo td tr ts tf PAGE NUMBER 40 100 200 8 10 40 80 30 MIN. -60 -40 -5 -10 -10 -10 Collector-Base Breakdown Vol.

BSS80B : SMD Type TransistIoCrs PNP Silicon Switching Transistors BSS80,BSS82 Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 77 Junction temperature Storage temperature Junction - soldering point Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS BSS80 BSS82 40 60 60 5 800 1 100 200 330 150 -65 to +150 220 Unit V V V mA A mA mA mW K/W 0-0.1 +0.10.38 -0.1 +.

BSS80B : ) BSS80B,C CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO vCBO vEBO 'C THERMAL CHARACTERISTICS Characteristic *Total Device Dissipation, Ta = 25°C Derate above 25°C Symbol PD Storage Temperature T stg 'Thermal Resistance Junction to Ambient R &JA mm•Package mounted on 99.5% alumina 10 x 8 x 0.6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) _^^^ OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage dC = 10 mA) Collector-Base Breakdown Voltage dC = 10 tiA) Emitter-Base Break.

BSS80C : PNP Silicon Switching Transistors BSS 80 BSS 82 High DC current gain q Low collector-emitter saturation voltage q Complementary types: BSS 79, BSS 81 (NPN) q Type BSS 80 B BSS 80 C BSS 82 B BSS 82 C Marking CHs CJs CLs CMs Ordering Code (tape and reel) Q62702-S557 Q62702-S492 Q62702-S560 Q62702-S482 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Symbol VCE0 VCB0 VE.

BSS80C : BSS80, BSS82 PNP Silicon Switching Transistors  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS79, BSS81 (NPN) 3 2 1 VPS05161 Type BSS80B BSS80C BSS82B BSS82C Marking CHs CJs CLs CMs 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg BSS80 40 60 5 800 1 100 200 330 150 BSS82 60 Unit .

BSS80C : www.DataSheet4U.com SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 95 PARTMARKING DETAIL — 7 BSS80B - CH BSS80C - CJ BSS80B BSS80C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM PTOT tj:tstg VALUE -60 -40 -5 -800 330 -55 to +150 SOT23 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) BSS80B BSS80C hFE fT Cobo td tr ts tf PAGE NUMBER 40 100 200 8 10 40 80 30 MIN. -60 -40 -5 -10 -10 -10 Collector-Base Breakdown Vol.

BSS80C : SMD Type TransistIoCrs PNP Silicon Switching Transistors BSS80,BSS82 Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 77 Junction temperature Storage temperature Junction - soldering point Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS BSS80 BSS82 40 60 60 5 800 1 100 200 330 150 -65 to +150 220 Unit V V V mA A mA mA mW K/W 0-0.1 +0.10.38 -0.1 +.

BSS80C : ) BSS80B,C CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO vCBO vEBO 'C THERMAL CHARACTERISTICS Characteristic *Total Device Dissipation, Ta = 25°C Derate above 25°C Symbol PD Storage Temperature T stg 'Thermal Resistance Junction to Ambient R &JA mm•Package mounted on 99.5% alumina 10 x 8 x 0.6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) _^^^ OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage dC = 10 mA) Collector-Base Breakdown Voltage dC = 10 tiA) Emitter-Base Break.

BSS81 : BSS79, BSS81 NPN Silicon Switching Transistors  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS80, BSS82 (PNP) 3 2 1 VPS05161 Type BSS79B BSS79C BSS81B BSS81C Marking CEs CFs CDs CGs 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg BSS79 40 75 6 800 1 100 200 330 150 BSS81 35 Unit .

BSS81 : SMD Type TransistIoCrs NPN Silicon Switching Transistors BSS79,BSS81 Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 77 Junction temperature Storage temperature Junction - soldering point Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS BSS79 BSS81 40 35 75 6 800 1 100 200 330 150 -65 to +150 220 Unit V V V mA A mA mA mW K/W 0-0.1 +0.10.38 -0.1 .




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