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2N6517M

Part Number 2N6517M
Manufacturer BLUE ROCKET ELECTRONICS
Title Silicon NPN transistor
Description SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features VCEO。 High Collector-Emitter Voltage. / Applications 。 High...
Features VCEO。 High Collector-Emitter Voltage. / Applications 。 High voltage application. / Equivalent Circuit / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Range Marking 30~200 3DH http://www.fsbrec.com 1/6 2N6517M Rev.E Mar.-2016 DATA SHEET...

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2N6517 : NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 – MARCH 94 FEATURES * 350 Volt VCEO * Gain of 15 at IC=100mA 2N6517 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation at Tamb= 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IB IC Ptot Tj:Tstg 350 350 6 250 500 680 E-Line TO92 Compatible VALUE UNIT V V V mA mA mW °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off .

2N6517 : .

2N6517 : 2N6517 — NPN Epitaxial Silicon Transistor 2N6517 NPN Epitaxial Silicon Transistor August 2010 Features • High Voltage Transistor • Collector Dissipation: PC(max) = 625mW • Complement to 2N6520 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value VCBO Collector-Base Voltage 2N6517 2N6517C 350 400 VCEO Collector-Emitter Voltage 2N6517 2N6517C 350 400 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 6 500 625 150 -55 ~ 150 Units V V V V V mA mW °C °C Electrical C.

2N6517 : MCC Features   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# NPN 2N6515, 2N6517 PNP 2N6519, 2N6520 High Voltage Transistor 625mW l Through Hole Package l 150oC Junction Temperature l Voltage and Current are negative for PNP transistors Pin Configuration Bottom View C B E TO-92 Mechanical Data l Case: TO-92, Molded Plastic l Polarity: indicated as above. A E B Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic 2N6515 2N6519 2N6517, 2N6520 Collector-Base Voltage 2N6515 2N6519 2N6517, 2N6520 Emitter-Base Voltage 2N6515-6517 2N6519-6520 Base Current Collector Current(DC) Power Dissipation@TA=25 C Power D.

2N6517 : SYMBOL 2N6515 2N6516 2N6517 2N6519 2N6520 Collector Emitter Voltage VCEO 250 300 350 Collector Base Voltage VCBO 250 300 350 Emitter Base Voltage VEBO NPN-------------------6------------------ PNP-------------------5------------------ Collector Current Continuous IC 500 Base Current (Continuous) IB 250 Total Power Dissipation @ Ta=25ºC PD 625 Derate Above 25ºC 5.0 Operating And Storage Junction Tstg -55 to +150 Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case Rth(j-a) Rth(j-c) 200 83.3 UNIT V V V V mA mA mW mW/ºC ºC ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collecto.

2N6517 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6515/D High Voltage Transistors COLLECTOR 3 COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER NPN 2N6515 2N6517 PNP 2N6519 2N6520 MAXIMUM RATINGS Rating 2N6517 Symbol 2N6515 2N6519 2N6520 Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 VCEO 250 300 350 VCBO 250 300 350 VEBO 6.0 5.0 Base Current Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C IB IC PD 250 500 625 5.0 Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Operating and Storage Junction Temperature Range TJ, Tstg – 55 .

2N6517 : The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage (NPN) Emitter-Base Voltage (PNP) Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO VEBO IC IB PD TJ, Tstg 2N6515 2N6518 250 250 2N6516 2N6519 300 300 6.0 5.0 500 250 625 -65 to +150 2N6517 2N6520 350 350 UNITS V V V V mA mA mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=150V ICBO V.

2N6517 : NPN − 2N6515, 2N6517; PNP − 2N6520 High Voltage Transistors NPN and PNP Features • Voltage and Current are Negative for PNP Transistors • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage 2N6515 2N6517, 2N6520 VCEO Value 250 350 Unit Vdc Collector − Base Voltage 2N6515 2N6517, 2N6520 VCBO 250 350 Vdc Emitter − Base Voltage VEBO Vdc 2N6515, 2N6517 6.0 2N6520 5.0 Base Current Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C IB 250 mAdc IC 500 mAdc PD 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −5.

2N6517 : Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2N6517 TRANSISTOR (NPN) FEATURES Power dissipation PCM : 625 mW (Tamb=25℃) Collector current ICM : 500 mA Collector-base voltage V(BR)CBO : 350 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TO-92 1. EMITTER 2. BASE 3. COLLECTOR 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector outpu.

2N6517 : TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package.  / Features 。 High voltage. / Applications 。 High voltage control circuit application. / Equivalent Circuit / Pinning 123 PIN1:Collector PIN 2:Base PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 2N6517 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC Tj Tstg DATA SHEET Rating 350 350 6.0 500 625 150 -55~150 Unit V V V mA mW ℃ ℃.

2N6517 : SEMICONDUCTOR TECHNICAL D ATA 2N6517 2N6517 TRANSISTOR (NPN) FEATURES Complement To 2N6520 L M C BC JA E G D H FF 1 23 DIM A B C D E F G H J L M MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.55 MAX 1.00 1.27 0.85 0.45 14.00 _0.50 2.30 0.51 MAX 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 350 350 6 0.5 625 200 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ TO-92 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless o.

2N6517 : Elektronische Bauelemente 2N6517 0.5 A, 350V NPN Plastic Encapsulated Transistor FEATURES  High Voltage Transistors  Complement of the 2N6520 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector   Base  Emitter TO-92 GH J AD B K E CF Emitter Base Collector REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal r.




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