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2SB709A


Part Number 2SB709A
Manufacturer BLUE ROCKET ELECTRONICS
Title Silicon PNP transistor
Description SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package.  / Features 2SD601A 。 Complementary pair with 2SD601A.  / Applications ...
Features 2SD601A 。 Complementary pair with 2SD601A.  / Applications 。 General power amplifier applications. / Equivalent Circuit / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range Q 160~260 R 210~340 Marking H1BQ H1...

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2SB709A : Transistor 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD601A 2.8 –0.3 +0.2 Unit: mm s Features q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 0.95 1.1 –0.1 +0.2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg –45 –45 –7 –200 –100 200 150 –55 ~ +150 V V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to bas.

2SB709A : Production specification Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE.  Mini type package, allowing downsizing Pb Lead-free of the equipment and automatic insertion through the tape packing and the magazine packing. 2SB709A APPLICATIONS  For general amplification complementary to 2SD601A. ORDERING INFORMATION Type No. Marking 2SB709A BQ1/BR1/BS1 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO ICP IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak collector Current Collector Current Collector Dissipation Junction and Storage .

2SB709A : SMD Type TransistIoCrs Silicon PNP Epitaxial Planar Type 2SB709A Features High forward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -45 -45 -7 -100 -200 200 150 -55 to.

2SB709A : Transys Electronics L I M I T E D www.DataSheet4U.com SOT-23 Plastic-Encapsulated Transistors SOT-23 1. BASE 2. EMITTER 2SB709A FEATURES Power dissipation PCM: TRANSISTOR (PNP) 3. COLLECTOR 0.2 W (Tamb=25℃) 0. 95 1. 0 2. 4 1. 3 Collector current -0.2 A ICM: Collector-base voltage -45 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current DC current gain Collector-emitter saturation voltage Transition frequency unless otherwise.

2SB709A : BL Galaxy Electrical www.DataSheet4U.com Production specification Silicon Epitaxial Planar Transistor High forward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2SB709A FEATURES z z Pb Lead-free APPLICATIONS z For general amplification complementary to 2SD601A SOT-23 ORDERING INFORMATION Type No. 2SB709A Marking BQ1,BR1,BS1 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and .

2SB709A : RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation PCM : 0.2 W(Tamb=25OC) 2SB709A MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load ,derate current by 20%. MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector curren.

2SB709A : 2SB709A(3CG709A) PNP /SILICON PNP TRANSISTOR :/Purpose: General power amplifier applications. : 2SD601A(3DG601A)/Features:Complementary pair with 2SD601A(3DG601A). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -45 V VCEO -45 V VEBO -7.0 V IC -100 mA ICP -200 mA PC 200 mW Tj 150 ℃ Tstg -55~150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Test condition IC=-10μA IE=0 IC=-2mA IB=0 IE=-10μA IC=0 VCB=-20V IE=0 VCE=-10V IB=0 VCE=-10V IC=-2mA IC=-100mA IB=-10mA VCB=-10V IC=-1mA f=200MHz VCB=-10V IE=0 f=1MHz Min -45 -45 -7 160 Rating Typ -0.3 80 2.7 Max -0.1 -100 460 -0.5 Unit V V V μA .

2SB709A : Elektronische Bauelemente 2SB709A -0.2A , -45V PNP Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES For general amplification Complementary of the 2SD601A CLASSIFICATION OF hFE Product-Rank 2SB709A-Q Range 160~260 Marking BQ1 2SB709A-R 210~340 BR1 2SB709A-S 290~460 BS1 PACKAGE INFORMATION Package MPQ SOT-23 3K LeaderSize 7’ inch SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 Collector 3 1 Base 2 Emitter ABSOLUTE MAX.

2SB709A-HF : SMD Type Transistors PNP Transistors 2SB709A-HF ■ Features ● For general amplification ● Complimentary to 2SD601A-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Base 2. Emitter 3. Collector 0-0.1 +0.10.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature range ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base break.




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