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BC808-40W Datasheet PDF


Part Number BC808-40W
Manufacturer Infineon
Title PNP Silicon AF Transistor
Description PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • ...
Features ...

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Datasheet BC808-40W PDF File








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BC808-40 : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H BC808–16 = 5E BC808–25 = 5F BC808–40 = 5G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 5 V –VCES –VCE0 –ICM Ptot Tj BC807 max. 50 max. 45 max. max. max. 1000 250 150 BC808 3.

BC808-40 : PNP Silicon AF Transistors BC 807 BC 808 q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 (NPN) Type BC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-25 BC 808-40 Marking 5As 5Bs 5Cs 5Es 5Fs 5Gs Ordering Code Q62702-C1735 Q62702-C1689 Q62702-C1721 Q62702-C1736 Q62702-C1504 Q62702-C1692 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BC 807 BC 808 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base curre.

BC808-40 : BC807 ... BC808 BC807 ... BC808 SMD General Purpose PNP Transistors SMD Universal-PNP-Transistoren IC = -800 mA VCES = -30 ...-50 V hFE ~ 160/250/400 Ptot = 310 mW Tjmax = 150°C Version 2017-01-19 SOT-23 (TO-236) Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) 0.4+0.1 -0.05 2.9 ±0.1 3 Type Code 1 2 1.9±0.1 1=B 2=E 1.1+0.1 -0.2 3=C Dimensions - Maße [mm] 2.4 ±0.2 1.3±0.1 ELV Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Weight approx. Case material Solder & assembly c.

BC808-40 : Elektronische Bauelemente BC808 -0.8A , -30V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Suitable for AF-Driver stages and low power output stages Complementary to BC818 CLASSIFICATION OF hFE(1) Product-Rank BC808-16 BC808-25 Range 100~250 160~400 Marking Code 5E 5F BC808-40 250~630 5G PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 Collector 3 ABSOLUTE MA.

BC808-40 : UNISONIC TECHNOLOGIES CO., LTD BC807/BC808 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS  FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818  ORDERING INFORMATION Ordering Number Package Note: BC807G-xx-AE3-R BC807G-xx-AL3-R BC808G-xx-AE3-R BC808G-xx-AL3-R Pin Assignment: C: Collector B: Base SOT-23 SOT-323 SOT-23 SOT-323 E: Emitter Pin Assignment 123 EBC EBC EBC EBC Packing Tape Reel Tape Reel Tape Reel Tape Reel  MARKING 807-16 808-16 9GAG 807-25 808-25 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 807-40 808-40 1 of 4 QW-R206-026.F BC807/BC808 PNP SILICON TRANSISTOR  ABSOLUTE MAXIMUM.

BC808-40 : PNP General Purpose Transistor BC808 FEATURES • Suitable for AF-Driver stages and low power output stages MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI) • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC TJ TSTG Electrical Characteristics @ TA = 25℃ unless otherwise specified Characteristic Test Condition Symbol Collector-base breakdown voltage Collector-emitter br.

BC808-40 : BL Ga PNP General Purpose Amplifier FEATURES z High collector current. z High current gain. z Low collector-emitter stauration voltage. z Complementary types:BC818. Pb Lead-free Production specification BC808-16/-25/-40 ORDERING INFORMATION Type No. Marking BC808-16 BC808-25 BC808-40 5E 5F 5G SOT-23 Package Code SOT-23 SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -30 VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -500 ICM Peak collector current -1 IB Base current -100 IBM Peak base current PD Total Device Dissipation -200 330 RθjA Thermal R.

BC808-40 : PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817.../W, BC818.../W (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BC807.../BC808... Type BC807-16 BC807-16W BC807-25 BC807-25W BC807-40 BC807-40W BC808-25 BC808-25W BC808-40 BC808-40W Marking Pin Configuration 5As 1 = B 2 = E 3 = C - - 5As 1 = B 2 = E 3 = C - - 5Bs 1 = B 2 = E 3 = C - - 5Bs 1 = B 2 = E 3 = C - - 5Cs 1 = B 2 = E 3 = C - - 5Cs 1 = B 2 = E 3 = C - - 5Fs 1 = B 2 = E 3 = C - - 5Fs 1 = B 2 = E 3 = C - - 5Gs 1 = B 2 = E 3 = C - - 5Gs 1 = B 2 = E 3 = C - - 1Pb-cont.

BC808-40 : GENERAL PURPOSE TRANSISTORS RoHS BC808 (25, 40) PNP SOT-23 FEATURES • S Prefix for automotive and other applications requiring unique site and control change • AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 1 BASE 2 EMITTER Collector Base Emitter PNP MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous FR-5 Board (Note 1) TA = 25°C Total Device Dissipation Derate Above 25°C Alumina Substrate (Note 2) TA = 25°C Derate Above 25°C VCBO VCEO VEBO IC PD -30 -25 -5 -500 225 1.8 300 2.4 V V V mAdc mW mW / °C Thermal Resistance, Junction-to-Amb.

BC808-40LT1 : BC808−25LT1, BC808−40LT1 General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC −25 −30 −5.0 −500 V V V mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and S.

BC808-40LT1G : BC808-25LT1G, BC808-40LT1G General Purpose Transistors PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC −25 −30 −5.0 −500 V V V mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Th.

BC808-40W : BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W (NPN) Type BC 807-16W BC 807-25W BC 807-40W BC 808-16W BC 808-25W BC 808-40W Marking Ordering Code 5As 5Bs 5Cs 5Es 5Fs 5Gs Q62702-C2325 Q62702-C2326 Q62702-C2327 Q62702-C2328 Q62702-C2329 Q62702-C2330 Pin Configuration 1=B 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 Maximum Ratings Parameter Collector-emitter voltage BC 807 W BC 808 W Collector-base voltage BC 807 W BC 808 W Emitter-base voltage DC collector current Pe.




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